Infineon Technologies AG IGBT Modules BSM15GD120DN2

Description
IGBT Modules 1200V 15A 3-PHASE
Description
IGBT Modules 1200V 15A 3-PHASE
Datasheet
Datasheet Summary
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IGBT module rated for 1200 V and 15 A, packaged in M_E2d/96 outline, with a collector-emitter saturation voltage of 2.50 V at 25 °C and a total power dissipation of 145 W. Thermal resistance junction-to-case is 0.86 K/W.

Datasheet Summary
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IGBT module rated for 1200 V and 15 A, packaged in M_E2d/96 outline, with a collector-emitter saturation voltage of 2.50 V at 25 °C and a total power dissipation of 145 W. Thermal resistance junction-to-case is 0.86 K/W.

Suppliers

Company
Product
Description
Supplier Links
Sheung Wan, Hong Kong
IGBT Modules
BSM15GD120DN2
IGBT Modules BSM15GD120DN2
IGBT Modules 1200V 15A 3-PHASE

IGBT Modules 1200V 15A 3-PHASE

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number BSM15GD120DN2
Product Name IGBT Modules
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