Infineon Technologies AG IGBT Modules BSM50GB120DN2

The BSM50GB120DN2 is a half-bridge IGBT power module with integrated fast free-wheeling diodes, packaged with an insulated metal base plate. It is rated for a collector-emitter voltage of 1200 V and a continuous collector current of 78 A at 25 °C, reducing to 50 A at 80 °C. Peak pulsed collector current is 156 A at 25 °C. The IGBT has a maximum chip temperature of 150 °C and a thermal resistance from chip to case of no more than 0.3 K/W. The free-wheeling diode exhibits a forward voltage of 2.3 to 2.8 V at 50 A and 25 °C, with reverse recovery charge of 2.8 µC at 25 °C. The module meets the IEC climatic category 40/125/56 and DIN humidity category F, with a 2500 Vrms insulation test rating and 20 mm creepage distance.