Infineon Technologies AG Power - IGBT - Automotive-qualified IGBTs - Automotive IGBT discretes - AIKP20N60CT AIKP20N60CT

Description
Infineon's Discrete IGBT TRENCHSTOP™ and Fieldstop technology for 600V Automotive applications offers very tight parameter distribution, high ruggedness, temperature stable behavior and very high switching speed. Summary of Features Very low V CEsat 1.5V (typ.) Maximum junction temperature 175°C Short circuit withstand time 5µs Positive temperature coefficient in V CEsat Low EMI Low gate charge Green package Very soft, fast recovery anti-parallel Emitter Controlled HE diode Potential Applications Main inverter AirCon compressor PTC heater Motor drives The AIKP20N60CT replaces the well known IKP20N60TA
Request a Quote Datasheet
Description
Infineon's Discrete IGBT TRENCHSTOP™ and Fieldstop technology for 600V Automotive applications offers very tight parameter distribution, high ruggedness, temperature stable behavior and very high switching speed. Summary of Features Very low V CEsat 1.5V (typ.) Maximum junction temperature 175°C Short circuit withstand time 5µs Positive temperature coefficient in V CEsat Low EMI Low gate charge Green package Very soft, fast recovery anti-parallel Emitter Controlled HE diode Potential Applications Main inverter AirCon compressor PTC heater Motor drives The AIKP20N60CT replaces the well known IKP20N60TA
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Power - IGBT - Automotive-qualified IGBTs - Automotive IGBT discretes - AIKP20N60CT - AIKP20N60CT - Infineon Technologies AG
Neubiberg, Germany
Power - IGBT - Automotive-qualified IGBTs - Automotive IGBT discretes - AIKP20N60CT
AIKP20N60CT
Power - IGBT - Automotive-qualified IGBTs - Automotive IGBT discretes - AIKP20N60CT AIKP20N60CT
Infineon's Discrete IGBT TRENCHSTOP™ and Fieldstop technology for 600V Automotive applications offers very tight parameter distribution, high ruggedness, temperature stable behavior and very high switching speed. Summary of Features Very low V CEsat 1.5V (typ.) Maximum junction temperature 175°C Short circuit withstand time 5µs Positive temperature coefficient in V CEsat Low EMI Low gate charge Green package Very soft, fast recovery anti-parallel Emitter Controlled HE diode Potential Applications Main inverter AirCon compressor PTC heater Motor drives The AIKP20N60CT replaces the well known IKP20N60TA

Infineon's Discrete IGBT TRENCHSTOP™ and Fieldstop technology for 600V Automotive applications offers very tight parameter distribution, high ruggedness, temperature stable behavior and very high switching speed.


Summary of Features

  • Very low V CEsat 1.5V (typ.)
  • Maximum junction temperature 175°C
  • Short circuit withstand time 5µs
  • Positive temperature coefficient in V CEsat
  • Low EMI
  • Low gate charge
  • Green package
  • Very soft, fast recovery anti-parallel Emitter Controlled HE diode

Potential Applications

  • Main inverter
  • AirCon compressor
  • PTC heater
  • Motor drives

The AIKP20N60CT replaces the well known IKP20N60TA

Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number AIKP20N60CT
Product Name Power - IGBT - Automotive-qualified IGBTs - Automotive IGBT discretes - AIKP20N60CT
VCE(on) 600 volts
Switching Speed 0.0 to 30 kHz
tr 14 ns
tf 42 ns
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