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Infineon Technologies AG Automotive IGBT Discretes AIKB40N65DF5

Description
World-class low-cost power for fast-switching applications in small SMD packages Energy efficiency is the most important aspect for electric vehicles and hybrid vehicles. Therefore, Infineon has developed the 650 V TRENCHSTOP™ 5 AUTO technology with H5/F5 optimization to enable highest efficiency fast switching automotive applications such as On-Board Charger, PFC, DC/DC and DC/AC. TRENCHSTOP™ 5 AUTO is an IGBT technology that enables world’s lowest losses for switching and conduction in its category. The resulting high efficiency enables either an increased cruising range or a downsizing of the batteries for electric vehicles. For hybrid vehicles, it helps to reduce overall fuel consumption. The great performance of TRENCHSTOP™ 5 AUTO offers a cost-optimized solution where engineers were used to use MOSFETs only. Moreover, TRENCHSTOP™ 5 AUTO technology in an SMD housing, like the D²PAK (PG-TO263-3), even further decreases IGBT solution costs by reducing cost on system and manufacturing level. This comes with the benefit of increased quality control due to automated processes. Summary of Features TRENCHSTOP™ 5 technology with low VCEsat, optimized as F5 variant (Highest Efficiency Variant) for highest possible switching speed 650V break-down voltage, 40A nominal current Co-packed with RAPID-1 fast and soft anti-parallel diode Very fast switching (up to 150kHz) Automotive qualified in accordance to Infineon quality standards Max junction temperature 175 °C Highest efficiency very low conduction losses very low switching losses Very low junction and case temperature SMD D2PAK package for low assembly costs and higher power density Extremely robust Potential Applications On-Board Charger (mainly in the PFC stage) DC-DC or DC-AC Auxiliary drive (e.g. Motor drive)
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Suppliers

Company
Product
Description
Supplier Links
Automotive IGBT Discretes - AIKB40N65DF5 - Infineon Technologies AG
Neubiberg, Germany
Automotive IGBT Discretes
AIKB40N65DF5
Automotive IGBT Discretes AIKB40N65DF5
World-class low-cost power for fast-switching applications in small SMD packages Energy efficiency is the most important aspect for electric vehicles and hybrid vehicles. Therefore, Infineon has developed the 650 V TRENCHSTOP™ 5 AUTO technology with H5/F5 optimization to enable highest efficiency fast switching automotive applications such as On-Board Charger, PFC, DC/DC and DC/AC. TRENCHSTOP™ 5 AUTO is an IGBT technology that enables world’s lowest losses for switching and conduction in its category. The resulting high efficiency enables either an increased cruising range or a downsizing of the batteries for electric vehicles. For hybrid vehicles, it helps to reduce overall fuel consumption. The great performance of TRENCHSTOP™ 5 AUTO offers a cost-optimized solution where engineers were used to use MOSFETs only. Moreover, TRENCHSTOP™ 5 AUTO technology in an SMD housing, like the D²PAK (PG-TO263-3), even further decreases IGBT solution costs by reducing cost on system and manufacturing level. This comes with the benefit of increased quality control due to automated processes. Summary of Features TRENCHSTOP™ 5 technology with low VCEsat, optimized as F5 variant (Highest Efficiency Variant) for highest possible switching speed 650V break-down voltage, 40A nominal current Co-packed with RAPID-1 fast and soft anti-parallel diode Very fast switching (up to 150kHz) Automotive qualified in accordance to Infineon quality standards Max junction temperature 175 °C Highest efficiency very low conduction losses very low switching losses Very low junction and case temperature SMD D2PAK package for low assembly costs and higher power density Extremely robust Potential Applications On-Board Charger (mainly in the PFC stage) DC-DC or DC-AC Auxiliary drive (e.g. Motor drive)

World-class low-cost power for fast-switching applications in small SMD packages

Energy efficiency is the most important aspect for electric vehicles and hybrid vehicles. Therefore, Infineon has developed the 650 V TRENCHSTOP™ 5 AUTO technology with H5/F5 optimization to enable highest efficiency fast switching automotive applications such as On-Board Charger, PFC, DC/DC and DC/AC.

TRENCHSTOP™ 5 AUTO is an IGBT technology that enables world’s lowest losses for switching and conduction in its category. The resulting high efficiency enables either an increased cruising range or a downsizing of the batteries for electric vehicles. For hybrid vehicles, it helps to reduce overall fuel consumption. The great performance of TRENCHSTOP™ 5 AUTO offers a cost-optimized solution where engineers were used to use MOSFETs only.

Moreover, TRENCHSTOP™ 5 AUTO technology in an SMD housing, like the D²PAK (PG-TO263-3), even further decreases IGBT solution costs by reducing cost on system and manufacturing level. This comes with the benefit of increased quality control due to automated processes.


Summary of Features

  • TRENCHSTOP™ 5 technology with low VCEsat, optimized as F5 variant (Highest Efficiency Variant) for highest possible switching speed
  • 650V break-down voltage, 40A nominal current
  • Co-packed with RAPID-1 fast and soft anti-parallel diode
  • Very fast switching (up to 150kHz)
  • Automotive qualified in accordance to Infineon quality standards
  • Max junction temperature 175 °C
  • Highest efficiency
    • very low conduction losses
    • very low switching losses
  • Very low junction and case temperature
  • SMD D2PAK package for low assembly costs and higher power density
  • Extremely robust

Potential Applications

  • On-Board Charger (mainly in the PFC stage)
  • DC-DC or DC-AC
  • Auxiliary drive (e.g. Motor drive)
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number AIKB40N65DF5
Product Name Automotive IGBT Discretes
VCE(on) 650 volts
Switching Speed 15 to 120 kHz
tr 13 ns
tf 6 ns
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