Infineon Technologies AG IGBT Modules BSM25GP120

Description
IGBT Modules 1200V 25A PIM
Description
IGBT Modules 1200V 25A PIM
Datasheet
Datasheet Summary
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The BSM25GP120 is a 1200 V, 25 A EconoPIM™ power integrated module with an IGBT2 Standard chip set, featuring a thermal resistance of 0.55 K/W for the internal rectifier diode and 1.20 K/W for the IGBT, and a maximum collector-emitter saturation voltage of 2.20 V, suitable for three-phase motor drive applications.

Datasheet Summary
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The BSM25GP120 is a 1200 V, 25 A EconoPIM™ power integrated module with an IGBT2 Standard chip set, featuring a thermal resistance of 0.55 K/W for the internal rectifier diode and 1.20 K/W for the IGBT, and a maximum collector-emitter saturation voltage of 2.20 V, suitable for three-phase motor drive applications.

Suppliers

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Product
Description
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Sheung Wan, Hong Kong
IGBT Modules
BSM25GP120
IGBT Modules BSM25GP120
IGBT Modules 1200V 25A PIM

IGBT Modules 1200V 25A PIM

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number BSM25GP120
Product Name IGBT Modules
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