Infineon Technologies AG IGBT Modules BSM100GD120DN2

Description
IGBT Modules 1200V 100A FL BRIDGE
Description
IGBT Modules 1200V 100A FL BRIDGE
Datasheet
Datasheet Summary
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The BSM100GD120DN2 is a 1200 V, 100 A IGBT module in a full-bridge configuration with a thermal resistance of 0.16 K/W from junction to case at 25 °C. It uses IGBT2 technology, features a gate-emitter voltage rating of 2.5 V, and is housed in a module designed for medium-power applications. The module is UL recognized and suitable for applications requiring robust switching performance in industrial drives and power systems.

Datasheet Summary
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The BSM100GD120DN2 is a 1200 V, 100 A IGBT module in a full-bridge configuration with a thermal resistance of 0.16 K/W from junction to case at 25 °C. It uses IGBT2 technology, features a gate-emitter voltage rating of 2.5 V, and is housed in a module designed for medium-power applications. The module is UL recognized and suitable for applications requiring robust switching performance in industrial drives and power systems.

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Sheung Wan, Hong Kong
IGBT Modules
BSM100GD120DN2
IGBT Modules BSM100GD120DN2
IGBT Modules 1200V 100A FL BRIDGE

IGBT Modules 1200V 100A FL BRIDGE

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number BSM100GD120DN2
Product Name IGBT Modules
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