Infineon Technologies AG IGBT Modules BSM50GB120DLC

Description
IGBT Modules 1200V 50A DUAL
Description
IGBT Modules 1200V 50A DUAL
Datasheet
Datasheet Summary
Powered by GS/AI

The BSM50GB120DLC is a 1200 V, 50 A IGBT module in a dual configuration with a thermal resistance from junction to case of 0.27 K/W for the IGBT and 0.27 K/W for the diode, and a collector-emitter saturation voltage of 2.10 V at 25°C. It is packaged in a modular design suitable for medium power applications, featuring a mounting outline designated M_34a/98 and is UL recognized. The module supports continuous collector current up to 50 A and is rated for a maximum junction temperature of 150°C.

Datasheet Summary
Powered by GS/AI

The BSM50GB120DLC is a 1200 V, 50 A IGBT module in a dual configuration with a thermal resistance from junction to case of 0.27 K/W for the IGBT and 0.27 K/W for the diode, and a collector-emitter saturation voltage of 2.10 V at 25°C. It is packaged in a modular design suitable for medium power applications, featuring a mounting outline designated M_34a/98 and is UL recognized. The module supports continuous collector current up to 50 A and is rated for a maximum junction temperature of 150°C.

Suppliers

Company
Product
Description
Supplier Links
Sheung Wan, Hong Kong
IGBT Modules
BSM50GB120DLC
IGBT Modules BSM50GB120DLC
IGBT Modules 1200V 50A DUAL

IGBT Modules 1200V 50A DUAL

Buy Now Datasheet

Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number BSM50GB120DLC
Product Name IGBT Modules
Unlock Full Specs
to access all available technical data