The AIKW50N60CT is a 600V, 50A IGBT with a soft, fast-recovery emitter-controlled antiparallel diode, designed for automotive applications. It is packaged in a PG-TO247-3 case and has a maximum junction temperature of 175°C. The collector-emitter saturation voltage is 1.5V at 50A and 25°C, with a gate-emitter threshold voltage between 4.1V and 5.7V. It supports a short-circuit withstand time of 5µs at V_GE=15V and V_CE≤400V. The device meets AEC-Q200 automotive qualification standards and is rated for continuous collector current up to 50A at T_C=100°C. Thermal resistance from junction to case is 0.45K/W for the IGBT and 0.80K/W for the diode.
Infineon's Discrete IGBT TRENCHSTOP™ and Fieldstop technology for 600V Automotive applications offers very tight parameter distribution, high ruggedness, temperature stable behavior and very high switching speed.
Summary of Features
Potential Applications
Applications
The AIKW50N60CT replaces the well known IKW50N60TA
| Infineon Technologies AG | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | AIKW50N60CT |
| Product Name | Power - IGBT - Automotive-qualified IGBTs - Automotive IGBT discretes - AIKW50N60CT |
| VCE(on) | 600 volts |
| Switching Speed | 0.0 to 30 kHz |
| tr | 29 ns |
| tf | 29 ns |
