Infineon Technologies AG IGBT Modules BSM75GB120DLC

The BSM75GB120DLC is an IGBT module rated for 1200 V collector-emitter voltage and 75 A continuous collector current at 80 °C, with a 150 A repetitive peak current. It features a maximum junction temperature of 150 °C and operates from -40 °C to 125 °C. The transistor has a saturation voltage of 2.1 to 2.9 V at 75 A and 15 V gate-emitter bias. Diode forward voltage is 1.7 to 2.3 V at 75 A. Switching losses are 7.5 mJ on and 9 mJ off at 75 A and 125 °C. Thermal resistance from junction to case is 0.18 K/W for the transistor and 0.50 K/W for the diode. Stray inductance is 40 nH. The module uses Al2O3 internal insulation with 20 mm creepage and 11 mm clearance. Weight is 250 g. Mounting torque for mechanical fixation is 3.0 to 6.0 Nm; for terminals, 2.5 to 5.0 Nm.