World-class low-cost power for fast-switching applications in small SMD packages
Energy efficiency is the most important aspect for electric vehicles and hybrid vehicles. Therefore, Infineon has developed the 650 V TRENCHSTOP™ 5 AUTO technology with H5/F5 optimization to enable highest efficiency fast switching automotive applications such as On-Board Charger, PFC, DC/DC and DC/AC.
TRENCHSTOP™ 5 AUTO is an IGBT technology that enables world’s lowest losses for switching and conduction in its category. The resulting high efficiency enables either an increased cruising range or a downsizing of the batteries for electric vehicles. For hybrid vehicles, it helps to reduce overall fuel consumption. The great performance of TRENCHSTOP™ 5 AUTO offers a cost-optimized solution where engineers were used to use MOSFETs only.
Moreover, TRENCHSTOP™ 5 AUTO technology in an SMD housing, like the D²PAK (PG-TO263-3), even further decreases IGBT solution costs by reducing cost on system and manufacturing level. This comes with the benefit of increased quality control due to automated processes.
Summary of Features
TRENCHSTOP™ 5 technology with low VCEsat, optimized as H5 variant (High Speed Variant) with softer switching behavior for easier design-in
650V break-down voltage, 50A nominal current
Co-packed with RAPID-1 fast and soft anti-parallel diode
Very fast switching (up to 150kHz)
Automotive qualified in accordance to Infineon quality standards
Max junction temperature 175 °C
Highest efficiency
very low conduction losses
very low switching losses
Very low junction and case temperature
SMD D2PAK package for low assembly costs and higher power density
Extremely robust
Potential Applications
On-Board Charger (mainly in the PFC stage)
DC-DC or DC-AC
Auxiliary drive (e.g. Motor drive)
Applications
On-board charging (OBC) for electric vehicles
Designers who used this product also designed with
IPW65R080CFDA | Automotive MOSFET
BTS4140N | Classic PROFET™ 24V | automotive smart high-side switch
IPD25N06S4L-30 | Automotive MOSFET
BTS5045-1EJA | PROFET™ + 12V | automotive smart high-side switch
IPW65R075CFD7A | Automotive MOSFET
IPD65R420CFDA | Automotive MOSFET
IAUT260N10S5N019 | Automotive MOSFET
BTS3405G | Classic HITFET™ 12V | automotive smart low-side switches
IPLU300N04S4-R8 | Automotive MOSFET
BTS7040-1EPA | PROFET™ +2 12V | automotive smart high-side switch
IPW65R080CFDA | Automotive MOSFET
BTS4140N | Classic PROFET™ 24V | automotive smart high-side switch
IPD25N06S4L-30 | Automotive MOSFET
BTS5045-1EJA | PROFET™ + 12V | automotive smart high-side switch
IPW65R075CFD7A | Automotive MOSFET
IPD65R420CFDA | Automotive MOSFET
IAUT260N10S5N019 | Automotive MOSFET
BTS3405G | Classic HITFET™ 12V | automotive smart low-side switches
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World-class low-cost power for fast-switching applications in small SMD packages
Energy efficiency is the most important aspect for electric vehicles and hybrid vehicles. Therefore, Infineon has developed the 650 V TRENCHSTOP™ 5 AUTO technology with H5/F5 optimization to enable highest efficiency fast switching automotive applications such as On-Board Charger, PFC, DC/DC and DC/AC.
TRENCHSTOP™ 5 AUTO is an IGBT technology that enables world’s lowest losses for switching and conduction in its category. The resulting high efficiency enables either an increased cruising range or a downsizing of the batteries for electric vehicles. For hybrid vehicles, it helps to reduce overall fuel consumption. The great performance of TRENCHSTOP™ 5 AUTO offers a cost-optimized solution where engineers were used to use MOSFETs only.
Moreover, TRENCHSTOP™ 5 AUTO technology in an SMD housing, like the D²PAK (PG-TO263-3), even further decreases IGBT solution costs by reducing cost on system and manufacturing level. This comes with the benefit of increased quality control due to automated processes.
Summary of Features
- TRENCHSTOP™ 5 technology with low VCEsat, optimized as H5 variant (High Speed Variant) with softer switching behavior for easier design-in
- 650V break-down voltage, 50A nominal current
- Co-packed with RAPID-1 fast and soft anti-parallel diode
- Very fast switching (up to 150kHz)
- Automotive qualified in accordance to Infineon quality standards
- Max junction temperature 175 °C
- Highest efficiency
- very low conduction losses
- very low switching losses
- Very low junction and case temperature
- SMD D2PAK package for low assembly costs and higher power density
- Extremely robust
Potential Applications
- On-Board Charger (mainly in the PFC stage)
- DC-DC or DC-AC
- Auxiliary drive (e.g. Motor drive)
Applications
- On-board charging (OBC) for electric vehicles
Designers who used this product also designed with
- IPW65R080CFDA |
Automotive MOSFET
- BTS4140N |
Classic PROFET™ 24V | automotive smart high-side switch
- IPD25N06S4L-30 |
Automotive MOSFET
- BTS5045-1EJA |
PROFET™ + 12V | automotive smart high-side switch
- IPW65R075CFD7A |
Automotive MOSFET
- IPD65R420CFDA |
Automotive MOSFET
- IAUT260N10S5N019 |
Automotive MOSFET
- BTS3405G |
Classic HITFET™ 12V | automotive smart low-side switches
- IPLU300N04S4-R8 |
Automotive MOSFET
- BTS7040-1EPA |
PROFET™ +2 12V | automotive smart high-side switch
- IPW65R080CFDA |
Automotive MOSFET
- BTS4140N |
Classic PROFET™ 24V | automotive smart high-side switch
- IPD25N06S4L-30 |
Automotive MOSFET
- BTS5045-1EJA |
PROFET™ + 12V | automotive smart high-side switch
- IPW65R075CFD7A |
Automotive MOSFET
- IPD65R420CFDA |
Automotive MOSFET
- IAUT260N10S5N019 |
Automotive MOSFET
- BTS3405G |
Classic HITFET™ 12V | automotive smart low-side switches
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