Suppliers

Company

Product

Description

Supplier Links

Shenzhen Shengyu Electronics Technology Limited

Futian, China

Discrete Semiconductor Products - Transistors - IGBTs
BSM50GD120DN2BOSA1

Discrete Semiconductor Products - Transistors - IGBTs BSM50GD120DN2BOSA1

IGBT MOD 1200V 72A 350W

Supplier's Site

Newark, An Avnet Company

Chicago, IL, United States

Igbt Module, 1200V, Econopack3; Continuous Collector Current Infineon
61M5056

Igbt Module, 1200V, Econopack3; Continuous Collector Current Infineon 61M5056

IGBT MODULE, 1200V, ECONOPACK3; Continuous Collector Current:72A; Collector Emitter Saturation Voltage:3V; Power Dissipation:350W; Operating Temperature Max:125°C; IGBT Termination:Stud; Collector Emitter Voltage Max:1.2kV RoHS Compliant: Yes

Supplier's Site

Technical Specifications

	Shenzhen Shengyu Electronics Technology Limited	Newark, An Avnet Company
Product Category	Insulated Gate Bipolar Transistors (IGBT)	Insulated Gate Bipolar Transistors (IGBT)
Product Number	BSM50GD120DN2BOSA1	61M5056
Product Name	Discrete Semiconductor Products - Transistors - IGBTs	Igbt Module, 1200V, Econopack3; Continuous Collector Current Infineon
Packing Method	Tray