Infineon Technologies AG IGBT, CoolSiC™ hybrid devices AIKW50N65RF5

Description
Hybrid Power Discrete with SiC power technology in THD package for e-Mobility applications Best cost-performance is the most important aspect for auxiliary applications in electric vehicles and hybrid vehicles. Therefore, Infineon has developed a hybrid of 650V TRENCHSTOP™ 5 AUTO fast-switching IGBT and CoolSiC™ Schottky Diode to enable a cost-efficient performance boost for fast switching automotive applications such as On-Board Charger, PFC, DC-DC and DC-AC. The combination of a best-in-class fast-switching IGBT with a very reliable SiC Diode builds a perfect cost-performance trade-off for hard-switching topologies. Due to the Qrr-free unipolar CoolSiC™ Schottky Diode, the Eon of the IGBT will be reduced significantly over silicon-only solutions. This makes the hybrid the first-choice for system-cost-sensitiv e hard commutation applications, such as Totem Pole topology in Automotive On-Board Charger applications. This results in better margin for low-complexity design-in activities. Summary of Features 650V TRENCHSTOP™ 5 IGBT + CoolSiC™ Schottky Diode Gen5 Best-in-class switching and conduction losses No reverse & forward recovery charge High operating temp: Tj,max = 175°C Robust against surge currents Low gate charge Qg Benefits Highest reliability against environmental conditions Increased system efficiency Best performance/cost ratio for hard switching topologies (e.g. Totem Pole) Supporting bi-directional On-Board Charger designs Potential Applications • On-Board Charger • PFC • DC-DC Applications Automotive high-voltage e-compressor DIN rail power supplies On-board charging (OBC) for electric vehicles Designers who used this product also designed with SAL-TC364DP-64F300F AA | AURIX™ Family – TC36xDP IPD50N06S4L-12 | Automotive MOSFET IPP026N10NF2S | N-Channel Power MOSFET IPW65R115CFD7A | Automotive MOSFET AIKW40N65DF5 | Automotive IGBT discretes AIKW50N65DF5 | Automotive IGBT discretes SAL-TC265D-40F200N BC | AURIX™ Family – TC26xD BTS7200-2EPA | PROFET™ +2 12V | automotive smart high-side switch TLF35584QVVS1 | OPTIREG™ PMIC TLE42744D V50 | OPTIREG™ linear voltage regulators (LDO) IAUC28N08S5L230 | Automotive MOSFET IPW65R050CFD7A | Automotive MOSFET AIKW75N60CT | Automotive IGBT discretes SAL-TC364DP-64F300F AA | AURIX™ Family – TC36xDP IPD50N06S4L-12 | Automotive MOSFET IPP026N10NF2S | N-Channel Power MOSFET IPW65R115CFD7A | Automotive MOSFET AIKW40N65DF5 | Automotive IGBT discretes AIKW50N65DF5 | Automotive IGBT discretes SAL-TC265D-40F200N BC | AURIX™ Family – TC26xD BTS7200-2EPA | PROFET™ +2 12V | automotive smart high-side switch 1 2 3 4
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Description
Hybrid Power Discrete with SiC power technology in THD package for e-Mobility applications Best cost-performance is the most important aspect for auxiliary applications in electric vehicles and hybrid vehicles. Therefore, Infineon has developed a hybrid of 650V TRENCHSTOP™ 5 AUTO fast-switching IGBT and CoolSiC™ Schottky Diode to enable a cost-efficient performance boost for fast switching automotive applications such as On-Board Charger, PFC, DC-DC and DC-AC. The combination of a best-in-class fast-switching IGBT with a very reliable SiC Diode builds a perfect cost-performance trade-off for hard-switching topologies. Due to the Qrr-free unipolar CoolSiC™ Schottky Diode, the Eon of the IGBT will be reduced significantly over silicon-only solutions. This makes the hybrid the first-choice for system-cost-sensitiv e hard commutation applications, such as Totem Pole topology in Automotive On-Board Charger applications. This results in better margin for low-complexity design-in activities. Summary of Features 650V TRENCHSTOP™ 5 IGBT + CoolSiC™ Schottky Diode Gen5 Best-in-class switching and conduction losses No reverse & forward recovery charge High operating temp: Tj,max = 175°C Robust against surge currents Low gate charge Qg Benefits Highest reliability against environmental conditions Increased system efficiency Best performance/cost ratio for hard switching topologies (e.g. Totem Pole) Supporting bi-directional On-Board Charger designs Potential Applications • On-Board Charger • PFC • DC-DC Applications Automotive high-voltage e-compressor DIN rail power supplies On-board charging (OBC) for electric vehicles Designers who used this product also designed with SAL-TC364DP-64F300F AA | AURIX™ Family – TC36xDP IPD50N06S4L-12 | Automotive MOSFET IPP026N10NF2S | N-Channel Power MOSFET IPW65R115CFD7A | Automotive MOSFET AIKW40N65DF5 | Automotive IGBT discretes AIKW50N65DF5 | Automotive IGBT discretes SAL-TC265D-40F200N BC | AURIX™ Family – TC26xD BTS7200-2EPA | PROFET™ +2 12V | automotive smart high-side switch TLF35584QVVS1 | OPTIREG™ PMIC TLE42744D V50 | OPTIREG™ linear voltage regulators (LDO) IAUC28N08S5L230 | Automotive MOSFET IPW65R050CFD7A | Automotive MOSFET AIKW75N60CT | Automotive IGBT discretes SAL-TC364DP-64F300F AA | AURIX™ Family – TC36xDP IPD50N06S4L-12 | Automotive MOSFET IPP026N10NF2S | N-Channel Power MOSFET IPW65R115CFD7A | Automotive MOSFET AIKW40N65DF5 | Automotive IGBT discretes AIKW50N65DF5 | Automotive IGBT discretes SAL-TC265D-40F200N BC | AURIX™ Family – TC26xD BTS7200-2EPA | PROFET™ +2 12V | automotive smart high-side switch 1 2 3 4
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Datasheet
Datasheet Summary
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The AIKW50N65RF5 is a 650V hybrid discrete semiconductor combining a TRENCHSTOP™ 5 fast-switching IGBT and a CoolSiC™ Schottky diode G5 for automotive applications such as on-board chargers and DC/DC converters. It is packaged in a PG-TO247-3 case with dimensions of 20.70-21.50 mm in length, 15.50-16.30 mm in width, and 4.70-5.30 mm in height. The device supports a maximum junction temperature of 175°C, has a collector-emitter saturation voltage of 1.60 V at 25°C and 50 A, and a gate charge of 109 nC. It is qualified to AEC-Q100 and AEC-Q101 standards and is RoHS compliant with Pb-free lead plating.

Datasheet Summary
Powered by GS/AI

The AIKW50N65RF5 is a 650V hybrid discrete semiconductor combining a TRENCHSTOP™ 5 fast-switching IGBT and a CoolSiC™ Schottky diode G5 for automotive applications such as on-board chargers and DC/DC converters. It is packaged in a PG-TO247-3 case with dimensions of 20.70-21.50 mm in length, 15.50-16.30 mm in width, and 4.70-5.30 mm in height. The device supports a maximum junction temperature of 175°C, has a collector-emitter saturation voltage of 1.60 V at 25°C and 50 A, and a gate charge of 109 nC. It is qualified to AEC-Q100 and AEC-Q101 standards and is RoHS compliant with Pb-free lead plating.

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Supplier Links
IGBT, CoolSiC™ hybrid devices - AIKW50N65RF5 - Infineon Technologies AG
Neubiberg, Germany
IGBT, CoolSiC™ hybrid devices
AIKW50N65RF5
IGBT, CoolSiC™ hybrid devices AIKW50N65RF5
Hybrid Power Discrete with SiC power technology in THD package for e-Mobility applications Best cost-performance is the most important aspect for auxiliary applications in electric vehicles and hybrid vehicles. Therefore, Infineon has developed a hybrid of 650V TRENCHSTOP™ 5 AUTO fast-switching IGBT and CoolSiC™ Schottky Diode to enable a cost-efficient performance boost for fast switching automotive applications such as On-Board Charger, PFC, DC-DC and DC-AC. The combination of a best-in-class fast-switching IGBT with a very reliable SiC Diode builds a perfect cost-performance trade-off for hard-switching topologies. Due to the Qrr-free unipolar CoolSiC™ Schottky Diode, the Eon of the IGBT will be reduced significantly over silicon-only solutions. This makes the hybrid the first-choice for system-cost-sensitiv e hard commutation applications, such as Totem Pole topology in Automotive On-Board Charger applications. This results in better margin for low-complexity design-in activities. Summary of Features 650V TRENCHSTOP™ 5 IGBT + CoolSiC™ Schottky Diode Gen5 Best-in-class switching and conduction losses No reverse & forward recovery charge High operating temp: Tj,max = 175°C Robust against surge currents Low gate charge Qg Benefits Highest reliability against environmental conditions Increased system efficiency Best performance/cost ratio for hard switching topologies (e.g. Totem Pole) Supporting bi-directional On-Board Charger designs Potential Applications • On-Board Charger • PFC • DC-DC Applications Automotive high-voltage e-compressor DIN rail power supplies On-board charging (OBC) for electric vehicles Designers who used this product also designed with SAL-TC364DP-64F300F AA | AURIX™ Family – TC36xDP IPD50N06S4L-12 | Automotive MOSFET IPP026N10NF2S | N-Channel Power MOSFET IPW65R115CFD7A | Automotive MOSFET AIKW40N65DF5 | Automotive IGBT discretes AIKW50N65DF5 | Automotive IGBT discretes SAL-TC265D-40F200N BC | AURIX™ Family – TC26xD BTS7200-2EPA | PROFET™ +2 12V | automotive smart high-side switch TLF35584QVVS1 | OPTIREG™ PMIC TLE42744D V50 | OPTIREG™ linear voltage regulators (LDO) IAUC28N08S5L230 | Automotive MOSFET IPW65R050CFD7A | Automotive MOSFET AIKW75N60CT | Automotive IGBT discretes SAL-TC364DP-64F300F AA | AURIX™ Family – TC36xDP IPD50N06S4L-12 | Automotive MOSFET IPP026N10NF2S | N-Channel Power MOSFET IPW65R115CFD7A | Automotive MOSFET AIKW40N65DF5 | Automotive IGBT discretes AIKW50N65DF5 | Automotive IGBT discretes SAL-TC265D-40F200N BC | AURIX™ Family – TC26xD BTS7200-2EPA | PROFET™ +2 12V | automotive smart high-side switch 1 2 3 4

Hybrid Power Discrete with SiC power technology in THD package for e-Mobility applications

Best cost-performance is the most important aspect for auxiliary applications in electric vehicles and hybrid vehicles. Therefore, Infineon has developed a hybrid of 650V TRENCHSTOP™ 5 AUTO fast-switching IGBT and CoolSiC™ Schottky Diode to enable a cost-efficient performance boost for fast switching automotive applications such as On-Board Charger, PFC, DC-DC and DC-AC.
The combination of a best-in-class fast-switching IGBT with a very reliable SiC Diode builds a perfect cost-performance trade-off for hard-switching topologies. Due to the Qrr-free unipolar CoolSiC™ Schottky Diode, the Eon of the IGBT will be reduced significantly over silicon-only solutions. This makes the hybrid the first-choice for system-cost-sensitive hard commutation applications, such as Totem Pole topology in Automotive On-Board Charger applications. This results in better margin for low-complexity design-in activities.


Summary of Features

  • 650V TRENCHSTOP™ 5 IGBT + CoolSiC™ Schottky Diode Gen5
  • Best-in-class switching and conduction losses
  • No reverse & forward recovery charge
  • High operating temp: Tj,max = 175°C
  • Robust against surge currents
  • Low gate charge Qg

Benefits

  • Highest reliability against environmental conditions
  • Increased system efficiency
  • Best performance/cost ratio for hard switching topologies (e.g. Totem Pole)
  • Supporting bi-directional On-Board Charger designs

Potential Applications

• On-Board Charger
• PFC
• DC-DC


Applications

  • Automotive high-voltage e-compressor
  • DIN rail power supplies
  • On-board charging (OBC) for electric vehicles

Designers who used this product also designed with


  • SAL-TC364DP-64F300F AA |
    AURIX™ Family – TC36xDP
  • IPD50N06S4L-12 |
    Automotive MOSFET
  • IPP026N10NF2S |
    N-Channel Power MOSFET
  • IPW65R115CFD7A |
    Automotive MOSFET
  • AIKW40N65DF5 |
    Automotive IGBT discretes
  • AIKW50N65DF5 |
    Automotive IGBT discretes
  • SAL-TC265D-40F200N BC |
    AURIX™ Family – TC26xD
  • BTS7200-2EPA |
    PROFET™ +2 12V | automotive smart high-side switch
  • TLF35584QVVS1 |
    OPTIREG™ PMIC
  • TLE42744D V50 |
    OPTIREG™ linear voltage regulators (LDO)
  • IAUC28N08S5L230 |
    Automotive MOSFET
  • IPW65R050CFD7A |
    Automotive MOSFET
  • AIKW75N60CT |
    Automotive IGBT discretes
  • SAL-TC364DP-64F300F AA |
    AURIX™ Family – TC36xDP
  • IPD50N06S4L-12 |
    Automotive MOSFET
  • IPP026N10NF2S |
    N-Channel Power MOSFET
  • IPW65R115CFD7A |
    Automotive MOSFET
  • AIKW40N65DF5 |
    Automotive IGBT discretes
  • AIKW50N65DF5 |
    Automotive IGBT discretes
  • SAL-TC265D-40F200N BC |
    AURIX™ Family – TC26xD
  • BTS7200-2EPA |
    PROFET™ +2 12V | automotive smart high-side switch

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Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number AIKW50N65RF5
Product Name IGBT, CoolSiC™ hybrid devices
tr 12 ns
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