Infineon Technologies AG IGBT Modules BSM50GB60DLC

Description
IGBT Modules 600V 50A DUAL
Description
IGBT Modules 600V 50A DUAL
Datasheet
Datasheet Summary
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BSM50GB60DLC is a dual IGBT module rated for 600 V collector-emitter voltage and 50 A continuous collector current at 80 ℃, with a peak repetitive collector current of 100 A. The module has a maximum junction temperature of 150 ℃ and operates from -40 ℃ to 125 ℃. It features an isolation test voltage of 2.5 kV RMS and is mounted with a 5 Nm torque on M6 screws. The case has a creepage distance of 15 mm and clearance of 8.5 mm, with internal insulation made of Al₂O₃. Thermal resistance from junction to case is 0.44 K/W for the transistor and 0.80 K/W for the diode. The module includes a claim of compliance with IEC 60286-3 for insulation testing and a weight of 180 g.

Datasheet Summary
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BSM50GB60DLC is a dual IGBT module rated for 600 V collector-emitter voltage and 50 A continuous collector current at 80 ℃, with a peak repetitive collector current of 100 A. The module has a maximum junction temperature of 150 ℃ and operates from -40 ℃ to 125 ℃. It features an isolation test voltage of 2.5 kV RMS and is mounted with a 5 Nm torque on M6 screws. The case has a creepage distance of 15 mm and clearance of 8.5 mm, with internal insulation made of Al₂O₃. Thermal resistance from junction to case is 0.44 K/W for the transistor and 0.80 K/W for the diode. The module includes a claim of compliance with IEC 60286-3 for insulation testing and a weight of 180 g.

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Sheung Wan, Hong Kong
IGBT Modules
BSM50GB60DLC
IGBT Modules BSM50GB60DLC
IGBT Modules 600V 50A DUAL

IGBT Modules 600V 50A DUAL

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number BSM50GB60DLC
Product Name IGBT Modules
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