Infineon Technologies AG IGBT Modules BSM75GB60DLC

Description
IGBT Modules 600V 75A DUAL
Description
IGBT Modules 600V 75A DUAL
Datasheet
Datasheet Summary
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The BSM75GB60DLC is a dual IGBT module rated for 600 V collector-emitter voltage and 75 A continuous collector current at 75°C case temperature, with a peak repetitive collector current of 150 A. The gate-emitter threshold voltage is 4.5 to 6.5 V, and the collector-emitter saturation voltage is 1.95 to 2.45 V at 75 A and 15 V gate drive. The internal diode has a forward voltage of 1.20 to 1.60 V at 75 A and a peak reverse recovery current of up to 115 A. Thermal resistance from junction to case is 0.35 K/W for the IGBT and 0.66 K/W for the diode. Maximum junction temperature is 150°C. The module mounts with an M6 screw torqued to 5 Nm and weighs 180 g.

Datasheet Summary
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The BSM75GB60DLC is a dual IGBT module rated for 600 V collector-emitter voltage and 75 A continuous collector current at 75°C case temperature, with a peak repetitive collector current of 150 A. The gate-emitter threshold voltage is 4.5 to 6.5 V, and the collector-emitter saturation voltage is 1.95 to 2.45 V at 75 A and 15 V gate drive. The internal diode has a forward voltage of 1.20 to 1.60 V at 75 A and a peak reverse recovery current of up to 115 A. Thermal resistance from junction to case is 0.35 K/W for the IGBT and 0.66 K/W for the diode. Maximum junction temperature is 150°C. The module mounts with an M6 screw torqued to 5 Nm and weighs 180 g.

Suppliers

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Sheung Wan, Hong Kong
IGBT Modules
BSM75GB60DLC
IGBT Modules BSM75GB60DLC
IGBT Modules 600V 75A DUAL

IGBT Modules 600V 75A DUAL

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number BSM75GB60DLC
Product Name IGBT Modules
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