Nexperia B.V. N-channel 40 V, 45 mΩ standard level MOSFET in LFPAK33 BUK7M45-40EX

Description
Standard level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. Features and benefits Q101 Compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True standard level gate with VGS(th) rating of greater than 1 V at 175 °C Applications 12 V automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching
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  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BUK7M45-40EX - Shenzhen Shengyu Electronics Technology Limited
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Description
Standard level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. Features and benefits Q101 Compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True standard level gate with VGS(th) rating of greater than 1 V at 175 °C Applications 12 V automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching
Request a Quote
Datasheet
Datasheet Summary
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N-channel 40 V, 45 mΩ standard level MOSFET in LFPAK33 (SOT1210) package for automotive applications, rated for 175 °C junction temperature with repetitive avalanche capability. The device supports continuous drain currents up to 19 A at 25 °C and has a drain-source on-state resistance of 33 to 45 mΩ at 25 °C. The gate-source threshold voltage is 1 V minimum at 175 °C. The package is a surface-mounted, single-ended 8-lead LFPAK33 with dimensions up to 3.40 mm × 3.40 mm. The product is qualified to AEC-Q201 standard.

Datasheet Summary
Powered by GS/AI

N-channel 40 V, 45 mΩ standard level MOSFET in LFPAK33 (SOT1210) package for automotive applications, rated for 175 °C junction temperature with repetitive avalanche capability. The device supports continuous drain currents up to 19 A at 25 °C and has a drain-source on-state resistance of 33 to 45 mΩ at 25 °C. The gate-source threshold voltage is 1 V minimum at 175 °C. The package is a surface-mounted, single-ended 8-lead LFPAK33 with dimensions up to 3.40 mm × 3.40 mm. The product is qualified to AEC-Q201 standard.

Suppliers

Company
Product
Description
Supplier Links
N-channel 40 V, 45 mΩ standard level MOSFET in LFPAK33 - BUK7M45-40EX - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
N-channel 40 V, 45 mΩ standard level MOSFET in LFPAK33
BUK7M45-40EX
N-channel 40 V, 45 mΩ standard level MOSFET in LFPAK33 BUK7M45-40EX
Standard level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. Features and benefits Q101 Compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True standard level gate with VGS(th) rating of greater than 1 V at 175 °C Applications 12 V automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching

Standard level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.

Features and benefits

  • Q101 Compliant
  • Repetitive avalanche rated
  • Suitable for thermally demanding environments due to 175 °C rating
  • True standard level gate with VGS(th) rating of greater than 1 V at 175 °C

Applications

  • 12 V automotive systems
  • Motors, lamps and solenoid control
  • Transmission control
  • Ultra high performance power switching
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-2563-1-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-2563-1-ND
Single FETs, MOSFETs 1727-2563-1-ND
N-Channel 40V 19A (Tc) 31W (Tc) Surface Mount LFPAK33

N-Channel 40V 19A (Tc) 31W (Tc) Surface Mount LFPAK33

Buy Now Datasheet
Single FETs, MOSFETs - 1727-2563-2-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-2563-2-ND
Single FETs, MOSFETs 1727-2563-2-ND
N-Channel 40V 19A (Tc) 31W (Tc) Surface Mount LFPAK33

N-Channel 40V 19A (Tc) 31W (Tc) Surface Mount LFPAK33

Buy Now Datasheet
Single FETs, MOSFETs - 1727-2563-6-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-2563-6-ND
Single FETs, MOSFETs 1727-2563-6-ND
N-Channel 40V 19A (Tc) 31W (Tc) Surface Mount LFPAK33

N-Channel 40V 19A (Tc) 31W (Tc) Surface Mount LFPAK33

Buy Now Datasheet
Mosfet, N-Ch, Auto, 19A, 40V, Sot1210; Transistor Polarity Nexperia - 17AC9445 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, Auto, 19A, 40V, Sot1210; Transistor Polarity Nexperia
17AC9445
Mosfet, N-Ch, Auto, 19A, 40V, Sot1210; Transistor Polarity Nexperia 17AC9445
MOSFET, N-CH, AUTO, 19A, 40V, SOT1210; Transistor Polarity:N Channel; Continuous Drain Current Id:19A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.033ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes

MOSFET, N-CH, AUTO, 19A, 40V, SOT1210; Transistor Polarity:N Channel; Continuous Drain Current Id:19A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.033ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes

Supplier's Site
Mosfet, Aec-Q101, N-Ch, 40V, Sot-1210; Transistor Polarity Nexperia - 28AK6712 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Aec-Q101, N-Ch, 40V, Sot-1210; Transistor Polarity Nexperia
28AK6712
Mosfet, Aec-Q101, N-Ch, 40V, Sot-1210; Transistor Polarity Nexperia 28AK6712
MOSFET, AEC-Q101, N-CH, 40V, SOT-1210; Transistor Polarity:N Channel; Continuous Drain Current Id:19A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.033ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes

MOSFET, AEC-Q101, N-CH, 40V, SOT-1210; Transistor Polarity:N Channel; Continuous Drain Current Id:19A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.033ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
BUK7M45-40EX
MOSFET BUK7M45-40EX
MOSFET BUK7M45-40E/MLFPAK/R EEL 7" Q1/

MOSFET BUK7M45-40E/MLFPAK/REEL 7" Q1/

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BUK7M45-40EX - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
BUK7M45-40EX
Discrete Semiconductor Products - Transistors - FETs, MOSFETs BUK7M45-40EX
MOSFET N-CH 40V 19A LFPAK33

MOSFET N-CH 40V 19A LFPAK33

Supplier's Site

Technical Specifications

  Nexperia B.V. DigiKey Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number BUK7M45-40EX 1727-2563-1-ND 17AC9445 BUK7M45-40EX BUK7M45-40EX
Product Name N-channel 40 V, 45 mΩ standard level MOSFET in LFPAK33 Single FETs, MOSFETs Mosfet, N-Ch, Auto, 19A, 40V, Sot1210; Transistor Polarity Nexperia MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MOSFET Operating Mode Enhancement
V(BR)DSS 40 volts
IDSS 19000 milliamps 19000 milliamps
VGS(off) 20 volts
PD 31 milliwatts
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