60V 120A N-CH Power MOSFET D2PAK SMT Product overview: BUK762R6-60E,118 from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 120A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 120A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BUK762R6-60E,118
N-Channel 60V 120A (Tc) 324W (Tc) Surface Mount D2PAK
N-Channel 60V 120A (Tc) 324W (Tc) Surface Mount D2PAK
N-Channel 60V 120A (Tc) 324W (Tc) Surface Mount D2PAK
Win Source Part Number: 1050071-BUK762R6-60E
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101, TrenchMOS™
Package: Tape & Reel
Standard Package: 800
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 324W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10170 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Alternative Parts (Cross-Reference): BUK7510-55AL127; BUK9E4R9-60E,127; BUK6E3R2-55C,1279340
ECCN: EAR99
Fake Threat In the Open Market: 68 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Nexperia USA Inc.
Other Names: 1727-1090-6,568-1024
Base Product Number: BUK762
Drive Voltage (Max Rds On, Min Rds On): 10V
N-channel TrenchMOS standard level FET
MOSFET N-CH 60V 120A D2PAK
MOSFET, N-CH, 60V, 120A, 324W, TO-263; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:120A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Rochester Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-BUK762R6-60E,118 | 1727-BUK762R6-60E,118CT-ND | 1050071-BUK762R6-60E,118 | BUK762R6-60E,118 | BUK762R6-60E,118 | 53W8642 |
| Product Name | 60V 120A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 60V, 120A, 324W, To-263; Channel Type Nexperia | |
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 60 volts | |||||
| PD | 324000 milliwatts | 324000 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | ||||
| Polarity | N-Channel | N-Channel | N-Channel |
