N-channel TrenchMOS standard level FET designed for automotive applications, housed in an LFPAK (SOT669) surface-mounted package. It has a drain-source voltage rating of 100 V, continuous drain current of 15 A, and total power dissipation of 60 W. The device is AEC-Q101 compliant and rated for a maximum junction temperature of 175 °C. Its on-state resistance is 86 to 102 mΩ at 25 °C with a gate-source voltage of 10 V and drain current of 5 A. It supports non-repetitive avalanche energy up to 35 mJ under specified conditions.
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia's High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
Features and benefits
Applications
N-Channel 100V 15A (Tc) 60W (Tc) Surface Mount LFPAK56, Power-SO8
N-Channel 100V 15A (Tc) 60W (Tc) Surface Mount LFPAK56, Power-SO8
N-Channel 100V 15A (Tc) 60W (Tc) Surface Mount LFPAK56, Power-SO8
MOSFET N-CH 100V 15A LFPAK56
| Nexperia B.V. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Transistors | Transistors | RF Transistors |
| Product Number | BUK7Y102-100B,115 | 1727-4603-6-ND | BUK7Y102-100B,115 |
| Product Name | N-channel TrenchMOS standard level FET | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Package Type | SOT669 SOT669 | SC-100, SOT-669 | Surface Mount |
