Nexperia B.V. N-channel 40 V, 1.0 mΩ standard level MOSFET in LFPAK88 BUK7S1R0-40HJ

Description
Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in a copper-clip LFPAK88 package. This product has been fully designed and qualified to meet beyond AEC-Q101 requirements delivering high performance and reliability. Features and benefits Fully automotive qualified to beyond AEC-Q101: -55 °C to +175 °C rating suitable for thermally demanding environments LFPAK88 package: Designed for smaller footprint and improved power density over older wire bond packages such as D²PAK for today’s space constrained high power automotive applications Thin package and copper clip enables LFPAK88 to be highly efficient thermally LFPAK copper clip technology enabling improvements over wire bond packages by: Increased maximum current capability and excellent current spreading Improved RDSon Low source inductance Low thermal resistance Rth LFPAK Gull Wing leads: Flexible leads enabling high Board Level Reliability absorbing mechanical and thermal cycling stress, unlike traditional QFN packages Visual (AOI) soldering inspection, no need for expensive x-ray equipment Easy solder wetting for good mechanical solder joint Unique 40 V Trench 9 superjunction technology: Reduced cell pitch and superjunction platform enables lower RDSon in the same footprint Improved SOA and avalanche capability compared to standard TrenchMOS Tight VGS(th) limits enable easy paralleling of MOSFETs Applications 12 V automotive systems 48 V DC/DC systems (on 12 V secondary side) Higher power motors, lamps and solenoid control Reverse polarity protection LED lighting Ultra high performance power switching
  • N-channel 40 V, 1.0 mΩ standard level MOSFET in LFPAK88 - BUK7S1R0-40HJ - Nexperia B.V.
    Nexperia B.V.
  • Single FETs, MOSFETs - 1727-8558-2-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-8558-1-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-8558-6-ND - DigiKey
    DigiKey
  • Mosfet, Aec-Q101, N-Ch, 40V, 325A, 375W Rohs Compliant Nexperia - 41AH9297 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Single FETs, MOSFETs - BUK7S1R0-40HJ - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BUK7S1R0-40HJ - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in a copper-clip LFPAK88 package. This product has been fully designed and qualified to meet beyond AEC-Q101 requirements delivering high performance and reliability. Features and benefits Fully automotive qualified to beyond AEC-Q101: -55 °C to +175 °C rating suitable for thermally demanding environments LFPAK88 package: Designed for smaller footprint and improved power density over older wire bond packages such as D²PAK for today’s space constrained high power automotive applications Thin package and copper clip enables LFPAK88 to be highly efficient thermally LFPAK copper clip technology enabling improvements over wire bond packages by: Increased maximum current capability and excellent current spreading Improved RDSon Low source inductance Low thermal resistance Rth LFPAK Gull Wing leads: Flexible leads enabling high Board Level Reliability absorbing mechanical and thermal cycling stress, unlike traditional QFN packages Visual (AOI) soldering inspection, no need for expensive x-ray equipment Easy solder wetting for good mechanical solder joint Unique 40 V Trench 9 superjunction technology: Reduced cell pitch and superjunction platform enables lower RDSon in the same footprint Improved SOA and avalanche capability compared to standard TrenchMOS Tight VGS(th) limits enable easy paralleling of MOSFETs Applications 12 V automotive systems 48 V DC/DC systems (on 12 V secondary side) Higher power motors, lamps and solenoid control Reverse polarity protection LED lighting Ultra high performance power switching
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
N-channel 40 V, 1.0 mΩ standard level MOSFET in LFPAK88 - BUK7S1R0-40HJ - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
N-channel 40 V, 1.0 mΩ standard level MOSFET in LFPAK88
BUK7S1R0-40HJ
N-channel 40 V, 1.0 mΩ standard level MOSFET in LFPAK88 BUK7S1R0-40HJ
Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in a copper-clip LFPAK88 package. This product has been fully designed and qualified to meet beyond AEC-Q101 requirements delivering high performance and reliability. Features and benefits Fully automotive qualified to beyond AEC-Q101: -55 °C to +175 °C rating suitable for thermally demanding environments LFPAK88 package: Designed for smaller footprint and improved power density over older wire bond packages such as D²PAK for today’s space constrained high power automotive applications Thin package and copper clip enables LFPAK88 to be highly efficient thermally LFPAK copper clip technology enabling improvements over wire bond packages by: Increased maximum current capability and excellent current spreading Improved RDSon Low source inductance Low thermal resistance Rth LFPAK Gull Wing leads: Flexible leads enabling high Board Level Reliability absorbing mechanical and thermal cycling stress, unlike traditional QFN packages Visual (AOI) soldering inspection, no need for expensive x-ray equipment Easy solder wetting for good mechanical solder joint Unique 40 V Trench 9 superjunction technology: Reduced cell pitch and superjunction platform enables lower RDSon in the same footprint Improved SOA and avalanche capability compared to standard TrenchMOS Tight VGS(th) limits enable easy paralleling of MOSFETs Applications 12 V automotive systems 48 V DC/DC systems (on 12 V secondary side) Higher power motors, lamps and solenoid control Reverse polarity protection LED lighting Ultra high performance power switching

Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in a copper-clip LFPAK88 package. This product has been fully designed and qualified to meet beyond AEC-Q101 requirements delivering high performance and reliability.

Features and benefits

  • Fully automotive qualified to beyond AEC-Q101:
    • -55 °C to +175 °C rating suitable for thermally demanding environments
  • LFPAK88 package:
    • Designed for smaller footprint and improved power density over older wire bond packages such as D²PAK for today’s space constrained high power automotive applications
    • Thin package and copper clip enables LFPAK88 to be highly efficient thermally
  • LFPAK copper clip technology enabling improvements over wire bond packages by:
    • Increased maximum current capability and excellent current spreading
    • Improved RDSon
    • Low source inductance
    • Low thermal resistance Rth
  • LFPAK Gull Wing leads:
    • Flexible leads enabling high Board Level Reliability absorbing mechanical and thermal cycling stress, unlike traditional QFN packages
    • Visual (AOI) soldering inspection, no need for expensive x-ray equipment
    • Easy solder wetting for good mechanical solder joint
  • Unique 40 V Trench 9 superjunction technology:
    • Reduced cell pitch and superjunction platform enables lower RDSon in the same footprint
    • Improved SOA and avalanche capability compared to standard TrenchMOS
    • Tight VGS(th) limits enable easy paralleling of MOSFETs

Applications

  • 12 V automotive systems
  • 48 V DC/DC systems (on 12 V secondary side)
  • Higher power motors, lamps and solenoid control
  • Reverse polarity protection
  • LED lighting
  • Ultra high performance power switching
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-8558-2-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-8558-2-ND
Single FETs, MOSFETs 1727-8558-2-ND
N-Channel 40V 325A (Ta) 375W (Ta) Surface Mount LFPAK88 (SOT1235)

N-Channel 40V 325A (Ta) 375W (Ta) Surface Mount LFPAK88 (SOT1235)

Buy Now Datasheet
Single FETs, MOSFETs - 1727-8558-1-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-8558-1-ND
Single FETs, MOSFETs 1727-8558-1-ND
N-Channel 40V 325A (Ta) 375W (Ta) Surface Mount LFPAK88 (SOT1235)

N-Channel 40V 325A (Ta) 375W (Ta) Surface Mount LFPAK88 (SOT1235)

Buy Now Datasheet
Single FETs, MOSFETs - 1727-8558-6-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-8558-6-ND
Single FETs, MOSFETs 1727-8558-6-ND
N-Channel 40V 325A (Ta) 375W (Ta) Surface Mount LFPAK88 (SOT1235)

N-Channel 40V 325A (Ta) 375W (Ta) Surface Mount LFPAK88 (SOT1235)

Buy Now Datasheet
Mosfet, Aec-Q101, N-Ch, 40V, 325A, 375W Rohs Compliant Nexperia - 41AH9297 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Aec-Q101, N-Ch, 40V, 325A, 375W Rohs Compliant Nexperia
41AH9297
Mosfet, Aec-Q101, N-Ch, 40V, 325A, 375W Rohs Compliant Nexperia 41AH9297
MOSFET, AEC-Q101, N-CH, 40V, 325A, 375W ROHS COMPLIANT: YES

MOSFET, AEC-Q101, N-CH, 40V, 325A, 375W ROHS COMPLIANT: YES

Supplier's Site Datasheet
Single FETs, MOSFETs - BUK7S1R0-40HJ - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
BUK7S1R0-40HJ
Single FETs, MOSFETs BUK7S1R0-40HJ
MOSFET N-CH 40V 325A LFPAK88

MOSFET N-CH 40V 325A LFPAK88

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
BUK7S1R0-40HJ
MOSFET BUK7S1R0-40HJ
MOSFET N-channel 40 V, 1.0 mO standard level MOSFET in LFPAK88

MOSFET N-channel 40 V, 1.0 mO standard level MOSFET in LFPAK88

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BUK7S1R0-40HJ - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
BUK7S1R0-40HJ
Discrete Semiconductor Products - Transistors - FETs, MOSFETs BUK7S1R0-40HJ
MOSFET N-CH 40V 325A LFPAK88

MOSFET N-CH 40V 325A LFPAK88

Supplier's Site

Technical Specifications

  Nexperia B.V. DigiKey Newark, An Avnet Company ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number BUK7S1R0-40HJ 1727-8558-2-ND 41AH9297 BUK7S1R0-40HJ BUK7S1R0-40HJ BUK7S1R0-40HJ
Product Name N-channel 40 V, 1.0 mΩ standard level MOSFET in LFPAK88 Single FETs, MOSFETs Mosfet, Aec-Q101, N-Ch, 40V, 325A, 375W Rohs Compliant Nexperia Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MOSFET Operating Mode Enhancement
V(BR)DSS 40 volts 40 volts
IDSS 325000 milliamps 325000 milliamps
VGS(off) 20 volts
PD 375 milliwatts 375000 milliwatts
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