Infineon Technologies AG 2N6804

Description
Power Field-Effect Transistor, 11A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
  • 2N6804 - Rochester Electronics
    Rochester Electronics
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Description
Power Field-Effect Transistor, 11A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
- 2N6804 - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
2N6804
2N6804
Power Field-Effect Transistor, 11A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA

Power Field-Effect Transistor, 11A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Power MOSFET
Product Number 2N6804
Polarity P-Channel
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