Infineon Technologies AG Single FETs, MOSFETs AIMZA75R025M2HXKSA1

The AIMZA75R025M2H is a 750 V Silicon Carbide MOSFET in a PG-TO247-4 package, designed for automotive applications with high efficiency and robustness in hard and soft switching topologies. It features a typical on-state resistance of 25 mΩ at 25°C, a peak drain current of 242 A, and a total gate charge of 49 nC. The device is avalanche-tested, supports an extended junction temperature up to 200°C for short durations, and offers low switching losses with a thermal resistance of 0.53-0.74 °C/W. It is qualified to AEC-Q101 and features a driver source pin for improved gate control and parasitic turn-off suppression. The package dimensions are specified with a lead pitch of 5.08 mm and a height of 20.10 mm maximum.