Integra Technologies, Inc. Datasheets for RF Transistors
RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors.
RF Transistors: Learn more
| Product Name | Notes |
|---|---|
| GaN S-Band Radar Transistor -- IGN2730M65 | ■ GaN on SiC HEMT Technology ■ POUT-PK > 65W @ 300us/20%/32V ■ 2.7-3.0GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate... |
| GaN S-Band Radar Transistor -- IGN2429M400 | ■ GaN on SiC HEMT Technology ■ POUT-PK = 400W @ 300us/10%/48V ■ 2.4-2.9GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate... |
| ISM Pulse Transistor -- IGN2856S500 | ■ GaN on SiC HEMT Technology ■ POUT-PK = 500W @ 12us/3%/50V ■ 2.856GHz Operating Frequency ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate Voltage and... |
| ISM Pulse Transistor -- IGN2998S500 | ■ GaN on SiC HEMT Technology ■ POUT-PK = 500W @ 8us/1%/50V; (PAVG = 5W) ■ 2.998GHz Operating Frequency ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative... |
| GaN S-Band Radar Transistor -- IGN2731M80 | ■ GaN on SiC HEMT Technology ■ POUT-PK = 80W @ 100us/10%/40V ■ 2.7-3.1GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate... |
| GaN L-Band Avionics Transistor -- IGN0912CW300 | ■ GaN on SiC HEMT Technology ■ POUT = 300W CW @ 36V ■ 960-1250 Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative... |
| GaN L-Band Radar Transistor -- IGN1214S1000B | ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 1000W @ 5us/1.5%/50V ■ 1.2-1.4GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate... |
| GaN S-Band Radar Transistor -- IGN2731L10 | ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 10W @ 40ms/50%/32V ■ 2.7-3.1GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate... |
| GaN S-Band Radar Transistor -- IGN3135L115 | ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 115W @ 3ms/30%/46V ■ 3.1-3.5GHz Instantaneous Operating Frequency Range ■ Input and Output Internal Impedance Pre-matched Device ■ Depletion Mode Device... |
| GaN L-Band Radar Transistor -- IGN1214M120 | ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 120W @ 300us/10%/50V ■ 1.2-1.4GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate... |
| GaN L-Band Avionics Transistor -- IGN1011L120 | ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 120W @ 48 X 32us ON, 18us OFF/6.4% DC / 50V ■ 1.030 and 1.090 GHz Operating Frequency ■ Internal Impedance... |
| GaN L-Band Radar Transistor -- IGN1214L125 | ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 125W @ 2ms/20%/50V ■ 1.2-1.4GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate... |
| GaN L-Band Avionics Transistor -- IGN0912L125A | ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 125W @ 444 X 7us ON, 6us OFF / 22.7% DC/ 50V ■ 0.96-1.22GHz Instantaneous Operating Frequency Range ■ Internal Impedance... |
| GaN S-Band Radar Transistor -- IGN3135L12 | ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 12W @ 3ms/30%/46V ■ 3.1-3.5GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate... |
| GaN L-Band Radar Transistor -- IGN1214L15 | ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 12W @ 5ms/30%/50V ■ 1.2-1.4GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate... |
| GaN UHF Transistor -- IGN450M160 | ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 160W @ 100us/10%/50V ■ 420 to 450 Operating Frequency ■ Internal Input Impedance Pre-matched Device ■ No Internal Output Match for... |
| GaN L-Band Radar Transistor -- IGN1214M250 | ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 250W @ 300us/10%/50V ■ 1.2-1.4GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate... |
| GaN L-Band Avionics Transistor -- IGN0912L250M | ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 250W @ 444 X 7uS ON, 6us OFF/ 22.7% DC / 50V OR 6ms, 20% DC / 50V ■ 0.96-1.22GHz Instantaneous... |
| GaN L-Band Avionics Transistor -- IGN0912L250A | ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 250W @ 444 X 7uS ON, 6us OFF/ 22.7% DC / 50V ■ 0.96-1.22GHz Instantaneous Operating Frequency Range ■ Internal Impedance... |
| GaN L-Band Avionics Transistor -- IGN1012S30 | ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 30W @ 32us / 2% / 50V ■ 1.025-1.150 GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion... |
| GaN L-Band Radar Transistor -- IGN1214L30 | ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 30W @ 5ms/30%/42V ■ 1.2-1.4GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate... |
| GaN L-Band Radar Transistor -- IGN1214M380C | ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 380W @ 150us/10%/50V ■ 1.21-1.40 GHz Instantaneous Operating Frequency Range ■ Internal Impedance Input Pre-matched Device ■ Depletion Mode Device ■ |
| GaN L-Band Avionics Transistor -- IGN1030M40 | ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 40W @ 300us / 10% / 50V ■ 1.030 Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode... |
| GaN L-Band Avionics Transistor -- IGN1012S40 | ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 40W @ 32us / 2% / 50V ■ 1.025-1.150 GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion... |
| GaN L-Band Avionics Transistor -- IGN1012L40 | ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 40W @ ELM Mode S / 6.4% / 50V ■ 1.025-1.150 GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device... |
| GaN L-Band Avionics Transistor -- IGN0912L45 | ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 45W @ 444 x 7 us ON, 6us OFF, 22.7% / 50V ■ 0.96-1.22GHz Instantaneous Operating Frequency Range ■ Internal Impedance... |
| GaN L-Band Avionics Transistor -- IGN0912LM500 | ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 500W @ 48 X 32uS ON, 18us OFF/ 6.4% DC / 50V ■ 0.96-1.22GHz Instantaneous Operating Frequency Range ■ Internal Impedance... |
| GaN L-Band Radar Transistor -- IGN1214M600 | ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 600W @ 150us/10%/50V ■ 1.2-1.4GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate... |
| GaN L-Band Radar Transistor -- IGN1214M60 | ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 60W @ 300us/10%/50V ■ 1.2-1.4GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate... |
| GaN L-Band Avionics Transistor -- IGN1011L60 | ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 60W @ 48 X 32us ON, 18us OFF/6.4% DC / 50V ■ 1.030 and 1.090 GHz Operating Frequency ■ Internal Impedance... |
| GaN L-Band Radar Transistor -- IGN1214M650A | ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 650W @ 300us/10%/50V ■ 1.2-1.4GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate... |
| GaN L-Band Avionics Transistor -- IGN1011L70 | ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 70W @ ELM Mode S / 6.4% / 50V ■ 1.030-1.090 GHz Instantaneous Operating Frequency Range ■ Internally Un-matched Device ■ |
| GaN C-Band Radar Transistor -- IGN5259M80R2 | ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 80W @ 300us / 10% / 50V ■ 5.2-5.9GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode... |
| GaN L-Band Radar Transistor -- IGN1214L500B | ■ GaN on SiC HEMT Technology ■ POUT-PK > 500W @ 2.0ms / 20% / 50V ■ 1.2-1.4GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode... |
| GaN L-Band Avionics Transistor -- IGN1012S1000 | ■ GaN on SiC HEMT Technology ■ POUT-PK = 1000W @ 32us/2% / 50V ■ 1.025-1.150GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ |
| GaN L-Band Avionics Transistor -- IGN1030L1000 | ■ GaN on SiC HEMT Technology ■ POUT-PK = 1000W @ ELM Mode S / 6.4% / 50V; (PAVG = 64W) ■ 1.030GHz Operating Frequency ■ Internal Impedance Pre-matched Device... |
| GaN L-Band Avionics Transistor -- IGN1011L1000R2 | ■ GaN on SiC HEMT Technology ■ POUT-PK = 1000W @ ELM Mode S /6.4% / 50V: (PAVG = 64W) ■ 1.030GHz and 1.090GHz Operating Frequency ■ Internal Impedance Pre-matched... |
| GaN S-Band Radar Transistor -- IGN2732M10 | ■ GaN on SiC HEMT Technology ■ POUT-PK = 10W @ 300us/10%/40V; (PAVG = 1.0W) ■ 2.70-3.20GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device... |
| GaN S-Band Radar Transistor -- IGN2731M120 | ■ GaN on SiC HEMT Technology ■ POUT-PK = 120W @ 100us/20%/30V ■ 2.7-3.1GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate... |
| GaN S-Band Radar Transistor -- IGT2731L120 | ■ GaN on SiC HEMT Technology ■ POUT-PK = 120W @ 40ms/50%/32V ■ 2.7-3.1GHz Instantaneous Operating Frequency Range ■ 50Ω Internally Impedance Matched Device ■ Depletion Mode Device ■ Negative... |
| GaN S-Band Radar Transistor -- IGN2731M130 | ■ GaN on SiC HEMT Technology ■ POUT-PK = 130W @ 100us/10%/50V ■ 2.7-3.1GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate... |
| GaN C-Band Radar Transistor -- IGN3842M130 | ■ GaN on SiC HEMT Technology ■ POUT-PK = 130W @ 100us/2%/50V ■ 3.8-4.2GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate... |
| GaN S-Band Radar Transistor -- IGT2731M130 | ■ GaN on SiC HEMT Technology ■ POUT-PK = 130W @ 300us/10%/50V ■ 2.7-3.1GHz Instantaneous Operating Frequency Range ■ 50Ω Internally Impedance Matched Device ■ Depletion Mode Device ■ Negative... |
| GaN S-Band Radar Transistor -- IGN3135M135 | ■ GaN on SiC HEMT Technology ■ POUT-PK = 135W @ 300us/10%/50V; (PAVG = 13.5W) ■ 3.1-3.5GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device... |
| GaN S-Band Radar Transistor -- IGN2731M180 | ■ GaN on SiC HEMT Technology ■ POUT-PK = 180W @ 100us/10%/50V ■ 2.7-3.1GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate... |
| GaN S-Band Radar Transistor -- IGN2731M200 | ■ GaN on SiC HEMT Technology ■ POUT-PK = 200W @ 300us/10%/44V ■ 2.7-3.1GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate... |
| GaN S-Band Radar Transistor -- IGN2731L200 | ■ GaN on SiC HEMT Technology ■ POUT-PK = 200W @ 3ms/30%/46V ■ 2.7-3.1GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate... |
| GaN S-Band Radar Transistor -- IGN3135M250 | ■ GaN on SiC HEMT Technology ■ POUT-PK = 250W @ 300us/10%/50V ■ 3.1-3.5GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate... |
| GaN L-Band Avionics Transistor -- IGN1011M400 | ■ GaN on SiC HEMT Technology ■ POUT-PK = 400W @ 128us/2%/50V ■ 1.030GHz and 1.090GHz Operating Frequencies ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate... |
| GaN L-Band Radar Transistor -- IGN1214M500R2 | ■ GaN on SiC HEMT Technology ■ POUT-PK = 500W @ 100us/10%/50V ■ 1.2-1.4GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate... |
| GaN L-Band Radar Transistor -- IGN1214M500 | ■ GaN on SiC HEMT Technology ■ POUT-PK = 500W @ 300us/10%/50V ■ 1.2-1.4GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate... |
| GaN L-Band Avionics Transistor -- IGN0912L500 | ■ GaN on SiC HEMT Technology ■ POUT-PK = 500W @ 444 X 7uS ON, 6us OFF/ 22.7% OR 6ms, 20% DC / 50V ■ 0.96-1.22GHz Instantaneous Operating Frequency Range... |
| GaN C-Band Radar Transistor -- IGT5259L50 | ■ GaN on SiC HEMT Technology ■ POUT-PK = 50W @ 1ms/15%/50V ■ 5.2-5.9GHz Instantaneous Operating Frequency Range ■ 50Ω Internally Impedance Matched Device ■ Depletion Mode Device ■ Negative... |
| GaN S-Band Radar Transistor -- IGN2731M5 | ■ GaN on SiC HEMT Technology ■ POUT-PK = 5W @ 300us/10%/50V ■ 2.70-3.10GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate... |
| GaN L-Band Avionics Transistor -- IGN1011M600 | ■ GaN on SiC HEMT Technology ■ POUT-PK = 600W @ 128us/2%/50V ■ 1.030GHz and 1.090GHz Operating Frequencies ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate... |
| GaN S-Band Radar Transistor -- IGN2932M75 | ■ GaN on SiC HEMT Technology ■ POUT-PK = 75W @ 100us/10%/45V; (PAVG = 7.5W) ■ 2.90-3.15GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device... |
| GaN L-Band Avionics Transistor -- IGN1011M800 | ■ GaN on SiC HEMT Technology ■ POUT-PK = 800W @ 128us/2%/50V ■ 1.030GHz and 1.090GHz Operating Frequency ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate... |
| GaN L-Band Avionics Transistor -- IGN1030M800 | ■ GaN on SiC HEMT Technology ■ POUT-PK = 800W @ 128us/2%/50V ■ 1.030GHz Operating Frequency ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate Voltage and... |
| GaN L-Band Avionics Transistor -- IGN1090M800 | ■ GaN on SiC HEMT Technology ■ POUT-PK = 800W @ 128us/2%/50V ■ 1.090GHz Operating Frequency ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate Voltage and... |
| GaN L-Band Avionics Transistor -- IGN1030L800 | ■ GaN on SiC HEMT Technology ■ POUT-PK = 800W @ ELM Mode S / 6.4% / 50V; (PAVG = 51.2W) ■ 1.030GHz Operating Frequency ■ Internal Impedance Pre-matched Device... |
| GaN L-Band Avionics Transistor -- IGN1011L1200 | ■ GEN-2 GaN on SiC HEMT Technology ■ POUT-PK = 1200W @ ELM Mode S / 6.4% / 50V OR 2.4ms, 6.4% DC / 50V ■ 1.030GHz and 1.090GHz Operating... |
| LDMOS L-Band Avionics Transistor -- ILD1011M1000HVE | ■ Silicon LDMOS Technology ■ POUT-PK = 1000W @ 50uS, 2%, 50V ■ 1030 Operating Frequency ■ Internal Impedance Pre-matched Device ■ Specified For Use Under Class AB Operation ■ |
| LDMOS L-Band Avionics Transistor -- ILD1011L200HV | ■ Silicon LDMOS Technology ■ POUT-PK = 200W @ ELM Mode S/6.4%/50V; (PAVG = 12.8W) ■ 1030 or 1090 Operating Frequency ■ Internal Impedance Pre-matched Device ■ Specified For Use... |
| LDMOS S-Band Radar Transistor -- ILD2731M60 | ■ Silicon LDMOS Technology ■ POUT-PK = 60W @ 300us/20%/32V; (PAVG = 12W) ■ 2.7-3.1GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Specified For Use Under Class... |
| LDMOS L-Band Avionics Transistor -- ILD1011L950HV | ■ Silicon LDMOS Technology ■ POUT-PK = 950W @ ELM Mode S/6.4%/50V ■ 1030 Operating Frequency ■ Internal Impedance Pre-matched Device ■ Specified For Use Under Class AB Operation ■ |
| GaN S-Band Radar Transistor -- IGN2729M500 | Available in a bolt down flanged version as IGN2729M500 or in a solder mount earless version IGN2729M500S. IGN2729M500 is an internally pre-matched, gallium nitride (GaN) high electron mobility transistor (HEMT). |
| BiPolar L-Band Radar Transistor -- IB0810M210 | IB0810M210 is designed for L-Band radar systems operating over the instantaneous band width of 870-990 . While operating in class C mode this common base device supplies a minimum of... |
| GaN Broadband Transistor -- IGN0110UM100 | IGN0110UM100 is a dual gallium nitride (GaN) high electron mobility transistor (HEMT). This device is designed for Broadband applications operating over the 100 – 1GHz instantaneous frequency band. Under CW... |
| GaN S-Band Radar Transistor -- IGN2729M250C | IGN2729M250C is an internally pre-matched, gallium nitride (GaN) high electron mobility transistor (HEMT). This part is designed for S-Band radar applications operating over the 2.7 – 2.9 GHz instantaneous frequency... |
| GaN S-Band Radar Transistor -- IGN2729M400 | IGN2729M400 is an internally pre-matched, gallium nitride (GaN) high electron mobility transistor (HEMT). This part is designed for S-Band radar applications operating over the 2.7 – 2.9 GHz instantaneous frequency... |
| BiPolar S-Band Radar Transistor -- IB2729M90 | is designed for S-Band ATC radar systems operating over the instantaneous bandwidth of 2.7-2.9 GHz. While operating in class C mode this common base device supplies a minimum of 90... |
| BiPolar L-Band Avionics Transistor -- IB1011M140 | L-Band Avionics Transistor The high power pulsed avionics transistor part number IB1011M140 is designed for L-Band avionics systems operating at 1030 and 1090 . While operating in class C mode... |
| LDMOS L-Band Radar Transistor -- ILD1214EL40 | Part number ILD1214EL40 is designed for L-Band radar applications operating over the 1.215-1.400 GHz instantaneous frequency band. Under 5ms/20% pulsing conditions it easily supplies a minimum of 40 watts of... |
| LDMOS S-Band Radar Transistor -- ILD2731M140 | Part number ILD2731M140 is designed for S-Band radar applications operating over the 2.7 – 3.1 GHz instantaneous frequency band. Under 300us / 10% pulsed conditions it supplies a minimum of... |
| LDMOS S-Band Radar Transistor -- ILD2731M30 | Part number ILD2731M30 is designed for S-Band radar applications operating over the 2.7-3.1 GHz instantaneous frequency band. Under 300us/10% pulsing conditions it easily supplies a minimum of 30 watts of... |
| LDMOS S-Band Radar Transistor -- ILD2735M120 | Part number ILD2735M120 is designed for S-Band radar applications operating over the 2.7 – 3.5 GHz instantaneous frequency band. Under 300us / 10% pulsed conditions it supplies a minimum of... |
| LDMOS S-Band Radar Transistor -- ILD2933M130 | Part number ILD2933M130 is designed for S-Band radar applications operating over the 2.9 – 3.3 GHz instantaneous frequency band. Under 300us / 10% pulsing conditions it supplies a minimum of... |
| LDMOS S-Band Radar Transistor -- ILD3135EL20 | Part number ILD3135EL20 is designed for S-Band radar applications operating over the 3.1 – 3.5 GHz instantaneous frequency band. Under 16ms / 50% pulsing conditions it supplies a minimum of... |
| LDMOS S-Band Radar Transistor -- ILD3135M120 | Part number ILD3135M120 is designed for S-Band radar applications operating over the 3.1 – 3.5 GHz instantaneous frequency band. Under 300us / 10% pulsing conditions it supplies a minimum of... |
| LDMOS S-Band Radar Transistor -- ILD3135M180 | Part number ILD3135M180 is designed for S-Band radar applications operating over the 3.1 – 3.5 GHz instantaneous frequency band. Under 300us / 10% pulsing conditions it supplies a minimum of... |
| LDMOS S-Band Radar Transistor -- ILD3135M30 | Part number ILD3135M30 is designed for S-Band radar applications operating over the 3.1 – 3.5 GHz instantaneous frequency band. Under 300us / 10% pulse conditions it supplies a minimum of... |
| LDMOS S-Band Radar Transistor -- ILT2731M130 | Part number ILT2731M130 is a high power transistor which is internally matched to 50 ohms. It is designed for S-Band radar systems and operates over the instantaneous bandwidth of 2.7-3.1... |
| LDMOS S-Band Radar Transistor -- ILT2731M15 | Part number ILT2731M15 is a high power transistor which is internally matched to 50 ohms. It is designed for S-Band radar systems and operates over the instantaneous bandwidth of 2.7-3.1... |
| LDMOS S-Band Radar Transistor -- ILT2731M30 | Part number ILT2731M30 is a high power transistor which is internally matched to 50 ohms. It is designed for S-Band radar systems and operates over the instantaneous bandwidth of 2.7-3.1... |
| LDMOS S-Band Radar Transistor -- ILT3035M15 | Part number ILT3035M15 is a miniaturized power amplifier which is internally matched to 50 ohms. It is designed for S-Band radar systems and operates over the instantaneous bandwidth of 3.0-3.5... |
| LDMOS S-Band Radar Transistor -- ILT3035M30 | Part number ILT3035M30 is a miniaturized power amplifier which is internally matched to 50 ohms. It is designed for S-Band radar systems and operates over the instantaneous bandwidth of 3.0-3.5... |
| BiPolar S-Band Radar Transistor -- IB2729M25 | S-Band Radar Transistor The high power pulsed radar transistor part number IB2729M25 is designed for S-Band ATC radar systems operating over the instantaneous bandwidth of 2.7-2.9 GHz. It is designed... |
| BiPolar S-Band Radar Transistor -- IB2729M5 | S-Band Radar Transistor The high power pulsed radar transistor part number IB2729M5 is designed for S-Band ATC radar systems operating over the instantaneous bandwidth of 2.7-2.9 GHz. While operating in... |
| BiPolar L-Band Avionics Transistor -- IB1011S250 | The high power pulsed avionics transistor device part number IB1011S250 is designed for L-Band radar systems operating between 1030 and 1090. While operating in class C mode this common base... |
| BiPolar L-Band Avionics Transistor -- IB1011S350 | The high power pulsed avionics transistor device part number IB1011S350 is designed for L-Band radar systems operating between 1030 and 1090. While operating in class C mode this common base... |
| BiPolar L-Band Avionics Transistor -- IB1011S70 | The high power pulsed avionics transistor device part number IB1011S70 is designed for L-Band radar systems operating between 1030 and 1090. While operating in class C mode this common base... |
| BiPolar L-Band Avionics Transistor -- IB0607S10 | The high power pulsed avionics transistor part number IB0607S10 is designed for UHF-Band avionics systems operating at 653 to 687 . While operating in class C mode under 20us pulse... |
| BiPolar L-Band Avionics Transistor -- IB0607S100 | The high power pulsed avionics transistor part number IB0607S100 is designed for UHF-Band avionics systems operating at 653 to 687 . While operating in class C mode under 20us pulse... |
| BiPolar L-Band Avionics Transistor -- IB0607S1000 | The high power pulsed avionics transistor part number IB0607S1000 is designed for UHF-Band avionics systems operating at 653 to 687 . While operating in class C mode under 20us pulse... |
| BiPolar L-Band Avionics Transistor -- IB1011L110 | The high power pulsed avionics transistor part number IB1011L110 is designed for L-Band avionics systems operating at 1030 and 1090 . While operating in class C mode under Mode S... |
| BiPolar L-Band Avionics Transistor -- IB1011L15 | The high power pulsed avionics transistor part number IB1011L15 is designed for L-Band avionics systems operating at 1030 and 1090 . While operating in class C mode under Mode S... |
| BiPolar L-Band Avionics Transistor -- IB1011L220 | The high power pulsed avionics transistor part number IB1011L220 is designed for L-Band avionics systems operating at 1030 and 1090 . While operating in class C mode under Mode S... |
| BiPolar L-Band Avionics Transistor -- IB1011L40 | The high power pulsed avionics transistor part number IB1011L40 is designed for L-Band avionics systems operating at 1030 and 1090 . While operating in class C mode under Mode S... |
| BiPolar L-Band Avionics Transistor -- IB1011L470 | The high power pulsed avionics transistor part number IB1011L470 is designed for L |
| BiPolar L-Band Avionics Transistor -- IB1011M10 | The high power pulsed avionics transistor part number IB1011M10 is designed for L-Band avionics systems operating at 1030 and 1090 . While operating in class C mode under simple mode... |
| BiPolar L-Band Avionics Transistor -- IB1011M1000 | The high power pulsed avionics transistor part number IB1011M1000 is designed for L-Band avionics systems operating at 1030 and 1090 . While operating in class C mode under simple mode... |
| BiPolar L-Band Avionics Transistor -- IB1011M1100 | The high power pulsed avionics transistor part number IB1011M1100 is designed for TCAS avionics systems operating at 1030 and 1090 . While operating in class C mode under 32ìs, 2%,... |
| BiPolar L-Band Avionics Transistor -- IB1011M190 | The high power pulsed avionics transistor part number IB1011M190 is designed for L-Band avionics systems operating at 1030 and 1090 . While operating in class C mode under Mode S... |
| BiPolar L-Band Avionics Transistor -- IB1011M20 | The high power pulsed avionics transistor part number IB1011M20 is designed for L-Band avionics systems operating at 1030 and 1090 . While operating in class C mode under simple mode... |
| BiPolar L-Band Avionics Transistor -- IB1011M250 | The high power pulsed avionics transistor part number IB1011M250 is designed for L-Band avionics systems operating at 1030 and 1090 . While operating in class C mode under Mode S... |
| BiPolar L-Band Avionics Transistor -- IB1011M350 | The high power pulsed avionics transistor part number IB1011M350 is designed for L-Band avionics systems operating at 1030 and 1090 . While operating in class C mode under Mode S... |
| BiPolar L-Band Avionics Transistor -- IB1011M660 | The high power pulsed avionics transistor part number IB1011M660 is designed for L-Band avionics systems operating at 1030 and 1090 . While operating in class C mode under Mode S... |
| BiPolar L-Band Avionics Transistor -- IB1011M70 | The high power pulsed avionics transistor part number IB1011M70 is designed for L-Band avionics systems operating at 1030 and 1090 . While operating in class C mode under Mode S... |
| BiPolar L-Band Avionics Transistor -- IB1011M800 | The high power pulsed avionics transistor part number IB1011M800 is designed for L |
| BiPolar L-Band Avionics Transistor -- IB1011S1000 | The high power pulsed avionics transistor part number IB1011S1000 is designed for L-Band avionics systems operating at 1030 and 1090 . While operating in class C mode under 10ìs, 1%,... |
| BiPolar L-Band Avionics Transistor -- IB1011S1500 | The high power pulsed avionics transistor part number IB1011S1500 is designed for L-Band avionics systems operating at 1030 and 1090 . While operating in class C mode under 10ìs, 1%,... |
| BiPolar L-Band Avionics Transistor -- IB1011S190 | The high power pulsed avionics transistor part number IB1011S190 is designed for L-Band avionics systems operating at 1030 and 1090 . While operating in class C mode under 10ìs, 1%,... |
| BiPolar L-Band Avionics Transistor -- IB1012S10 | The high power pulsed avionics transistor part number IB1012S10 is designed for L-Band avionics systems operating at 1025 to 1150 . While operating in class C mode under DME pulse... |
| BiPolar L-Band Avionics Transistor -- IB1012S1100 | The high power pulsed avionics transistor part number IB1012S1100 is designed for L-Band avionics systems operating at 1025 to 1150 . While operating in class C mode under DME pulse... |
| BiPolar L-Band Avionics Transistor -- IB1012S150 | The high power pulsed avionics transistor part number IB1012S150 is designed for L-Band avionics systems operating at 1025 to 1150 . While operating in class C mode under DME pulse... |
| BiPolar L-Band Avionics Transistor -- IB1012S20 | The high power pulsed avionics transistor part number IB1012S20 is designed for L-Band avionics systems operating at 1025 to 1150 . While operating in class C mode under DME pulse... |
| BiPolar L-Band Avionics Transistor -- IB1012S50 | The high power pulsed avionics transistor part number IB1012S50 is designed for L-Band avionics systems operating at 1025 to 1150 . While operating in class C mode under DME pulse... |
| BiPolar L-Band Avionics Transistor -- IB1012S800 | The high power pulsed avionics transistor part number IB1012S800 is designed for L-Band avionics systems operating at 1025 to 1150 . While operating in class C mode under DME pulse... |
| BiPolar L-Band Radar Transistor -- IB1416S650 | The high power pulsed avionics transistor part number IB1416S650 is designed for L-Band avionics systems operating at 1450 to 1550 . While operating in class C mode under 8s, 1%,... |
| BiPolar L-Band Radar Transistor -- IB0810M100 | The high power pulsed radar transistor device part number IB0810M100 is designed for L-Band radar systems operating over the instantaneous bandwidth of 870-990 . While operating in class C mode... |
| BiPolar L-Band Radar Transistor -- IB0810M12 | The high power pulsed radar transistor device part number IB0810M12 is designed for L-Band radar systems operating over the instantaneous bandwidth of 870-990 MHz. While operating in class C mode... |
| BiPolar L-Band Radar Transistor -- IB0810M50 | The high power pulsed radar transistor device part number IB0810M50 is designed for L-Band radar systems operating over the instantaneous bandwidth of 870-990 MHz. While operating in class C mode... |
| BiPolar L-Band Radar Transistor -- IB1214M130 | The high power pulsed radar transistor device part number IB1214M130 is designed for L-Band radar systems operating over the instantaneous bandwidth of 1.210-1.400 GHz. While operating in class C mode... |
| BiPolar L-Band Radar Transistor -- IB1214M150 | The high power pulsed radar transistor device part number IB1214M150 is designed for L-Band radar systems operating over the instantaneous bandwidth of 1.215-1.400 GHz. While operating in class C mode... |
| BiPolar L-Band Radar Transistor -- IB1214M32 | The high power pulsed radar transistor device part number IB1214M32 is designed for L-Band radar systems operating over the instantaneous bandwidth of 1.200 - 1.400 GHz. While operating in class... |
| BiPolar L-Band Radar Transistor -- IB1214M375 | The high power pulsed radar transistor device part number IB1214M375 is designed for L-Band radar systems operating over the instantaneous bandwidth of 1.215-1.400 GHz. While operating in class C mode... |
| BiPolar L-Band Radar Transistor -- IB1214M55 | The high power pulsed radar transistor device part number IB1214M55 is designed for L-Band radar systems operating over the instantaneous bandwidth of 1.215-1.400 GHz. While operating in class C mode... |
| BiPolar L-Band Radar Transistor -- IB1214M6 | The high power pulsed radar transistor device part number IB1214M6 is designed for L-Band radar systems operating over the instantaneous bandwidth of 1.200 - 1.400 GHz. While operating in class... |
| BiPolar S-Band Radar Transistor -- IB2226M160 | The high power pulsed radar transistor device part number IB2226M160 is designed for S-Band radar systems operating over the instantaneous bandwidth of 2.25-2.55 GHz. While operating in class C mode... |
| BiPolar S-Band Radar Transistor -- IB2226M80 | The high power pulsed radar transistor device part number IB2226M80 is designed for S-Band radar systems operating over the instantaneous bandwidth of 2.25-2.55 GHz. While operating in class C mode... |
| BiPolar S-Band Radar Transistor -- IB2226MH110 | The high power pulsed radar transistor device part number IB2226MH110 is designed for S-Band radar systems operating over the instantaneous bandwidth of 2.25-2.55 GHz. While operating in class C mode... |
| BiPolar S-Band Radar Transistor -- IB2226MH15 | The high power pulsed radar transistor device part number IB2226MH15 is designed for S-Band radar systems operating over the instantaneous bandwidth of 2.25-2.55 GHz. While operating in class C mode... |
| BiPolar S-Band Radar Transistor -- IB2226MH160 | The high power pulsed radar transistor device part number IB226MH160 is designed for S-Band radar systems operating over the instantaneous bandwidth of 2.25-2.55 GHz. While operating in class C mode... |
| BiPolar S-Band Radar Transistor -- IB2731M110 | The high power pulsed radar transistor device part number IB2731M110 is designed for S-Band radar systems operating over the instantaneous bandwidth of 2.7-3.1 GHz. While operating in class C mode... |
| BiPolar S-Band Radar Transistor -- IB2731MH110 | The high power pulsed radar transistor device part number IB2731MH110 is designed for S-Band radar systems operating over the instantaneous bandwidth of 2.7-3.1 GHz. While operating in class C mode... |
| BiPolar S-Band Radar Transistor -- IB2731MH25 | The high power pulsed radar transistor device part number IB2731MH25 is designed for S-Band radar systems operating over the instantaneous bandwidth of 2.7-3.1 GHz. While operating in class C mode... |
| BiPolar S-Band Radar Transistor -- IB2931MH155 | The high power pulsed radar transistor device part number IB2931MH155 is designed for S-Band radar systems operating over the instantaneous bandwidth of 2.9-3.1 GHz. While operating in class C mode... |
| BiPolar S-Band Radar Transistor -- IB2931MH55 | The high power pulsed radar transistor device part number IB2931MH55 is designed for S-Band radar systems operating over the instantaneous bandwidth of 2.9-3.1 GHz. While operating in class C mode... |
| BiPolar S-Band Radar Transistor -- IB2934M100 | The high power pulsed radar transistor device part number IB2934M100 is designed for S-Band radar systems operating over the instantaneous bandwidth of 2.9-3.4 GHz. While operating in class C mode... |
| BiPolar S-Band Radar Transistor -- IB3134M100 | The high power pulsed radar transistor device part number IB3134M100 is designed for S-Band radar systems operating over the instantaneous bandwidth of 3.1-3.4 GHz. While operating in class C mode... |
| BiPolar S-Band Radar Transistor -- IB3134M25 | The high power pulsed radar transistor device part number IB3134M25 is designed for S-Band radar systems operating over the instantaneous bandwidth of 3.1-3.4 GHz. While operating in class C mode... |
| BiPolar S-Band Radar Transistor -- IB3135MH100 | The high power pulsed radar transistor device part number IB3135MH100 is designed for S-Band radar systems operating over the instantaneous bandwidth of 3.1-3.5 GHz. While operating in class C mode... |
| BiPolar S-Band Radar Transistor -- IB3135MH20 | The high power pulsed radar transistor device part number IB3135MH20 is designed for S-Band radar systems operating over the instantaneous bandwidth of 3.1-3.5 GHz. While operating in class C mode... |
| BiPolar S-Band Radar Transistor -- IB3135MH45 | The high power pulsed radar transistor device part number IB3135MH45 is designed for S-Band radar systems operating over the instantaneous bandwidth of 3.1-3.5 GHz. While operating in class C mode... |
| BiPolar S-Band Radar Transistor -- IB3135MH5 | The high power pulsed radar transistor device part number IB3135MH5 is designed for S-Band radar systems operating over the instantaneous bandwidth of 3.1-3.5 GHz. While operating in class C mode... |
| BiPolar S-Band Radar Transistor -- IB3135MH65 | The high power pulsed radar transistor device part number IB3135MH65 is designed for S-Band radar systems operating over the instantaneous bandwidth of 3.1-3.5 GHz. While operating in class C mode... |
| BiPolar S-Band Radar Transistor -- IB3135MH75 | The high power pulsed radar transistor device part number IB3135MH75 is designed for S-Band radar systems operating over the instantaneous bandwidth of 3.1-3.5 GHz. While operating in class C mode... |
| BiPolar L-Band Avionics Transistor -- IB450S300 | The high power pulsed radar transistor device part number IB450S300 is designed for UHF radar systems operating at 450 . While operating in class C mode this common base device... |
| BiPolar L-Band Avionics Transistor -- IB450S500 | The high power pulsed radar transistor device part number IB450S500 is designed for UHF radar systems operating at 450 . While operating in class C mode this common base device... |
| BiPolar S-Band Radar Transistor -- IB2729M170 | The high power pulsed radar transistor part number IB2729M170 is designed for S-Band ATC radar systems operating over the instantaneous bandwidth of 2.7-2.9 GHz. While operating in class C mode... |
| BiPolar L-Band Avionics Transistor -- IB0912L200 | The high power pulsed transistor device part number IB0912L200 is designed for systems operating over the instantaneous bandwidth of 960-1215 . While operating in class C mode under the specified... |
| BiPolar L-Band Avionics Transistor -- IB0912L30 | The high power pulsed transistor device part number IB0912L30 is designed for systems operating over the instantaneous bandwidth of 960-1215 . While operating in class C mode under 450us-15% pulsing... |
| BiPolar L-Band Avionics Transistor -- IB0912L70 | The high power pulsed transistor device part number IB0912L70 is designed for systems operating over the instantaneous bandwidth of 960-1215 . While operating in class C mode under 444x (7us... |
| BiPolar L-Band Avionics Transistor -- IB0912M210 | The high power pulsed transistor device part number IB0912M210 is designed for systems operating over the instantaneous bandwidth of 960-1215 . While operating in class C mode under pulsing conditions... |
| BiPolar L-Band Avionics Transistor -- IB0912M350 | The high power pulsed transistor device part number IB0912M350 is designed for systems operating over the instantaneous bandwidth of 960-1215 . While operating in class C mode under pulsing conditions... |
| BiPolar L-Band Avionics Transistor -- IB0912M500 | The high power pulsed transistor device part number IB0912M500 is designed for systems operating over the instantaneous bandwidth of 960-1215 . While operating in class C mode under the specified... |
| BiPolar L-Band Avionics Transistor -- IB0912M600 | The high power pulsed transistor device part number IB0912M600 is designed for systems operating over the instantaneous bandwidth of 960-1215 MHz. While operating in class C mode under pulsing conditions... |
| BiPolar L-Band Avionics Transistor -- IB0912M70 | The high power pulsed transistor device part number IB0912M70 is designed for systems operating over the instantaneous bandwidth of 960-1215 . While operating in class C mode under TACAN pulsing... |
| BiPolar L-Band Avionics Transistor -- IB1012S500 | The high power pulsed transistor device part number IB1012S500 is designed for systems operating over the instantaneous bandwidth of 1025-1150 . While operating in class C mode under DME pulsing... |
| ISM Pulse Transistor -- IB2856S250 | The high power pulsed transistor part number IB2856S250 is designed to operate in class C mode. This common base device supplies a minimum of 250 watts of peak pulse power... |
| ISM Pulse Transistor -- IB2856S30 | The high power pulsed transistor part number IB2856S30 is designed to operate in class C mode. This common base device supplies a minimum of 30 watts of peak pulse power... |
| ISM Pulse Transistor -- IB2856S65 | The high power pulsed transistor part number IB2856S65 is designed to operate in class C mode. This common base device supplies a minimum of 65 watts of peak pulse power... |
| ISM Pulse Transistor -- IB3000S200 | The high power pulsed transistor part number IB3000S200 is designed to operate in class C mode. This common base device supplies a minimum of 200 watts of peak pulse power... |
| ISM Pulse Transistor -- IB3000S60 | The high power pulsed transistor part number IB3000S60 is designed to operate in class C mode. This common base device supplies a minimum of 60 watts of peak pulse power... |
| VDMOS Broadband Transistor -- IDM165L650 | The high power pulsed transistor part number IDM165L650 is designed for VHF-Band systems operating at 125-167 . Operating at a pulse width of 1ms with a duty factor of 20%,... |
| VDMOS Broadband Transistor -- IDM265L650 | The high power pulsed transistor part number IDM265L650 is designed for VHF-Band systems operating at 190-265 . Operating at a pulse width of 1ms with a duty factor of 20%,... |
| LDMOS L-Band Radar Transistor -- ILD1214EL200 | The high power pulsed transistor part number ILD1214EL200 is designed for L-Band systems operating at 1.215–1.400 GHz. Operating at a pulse width of 5ms with a duty factor of 20%,... |
| LDMOS L-Band Radar Transistor -- ILD1214L250 | The high power pulsed transistor part number ILD1214L250 is designed for L-Band systems operating at 1.2–1.4 GHz. Operating at a pulse width of 1ms with a duty factor of 10%,... |
| VDMOS Broadband Transistor -- IDM175CW300 | The high power silicon transistor part number IDM175CW300 is designed for VHF-Band systems operating at 1-200 . Operating at CW conditions, this dual MOSFET device supplies a minimum of 300... |
| VDMOS Broadband Transistor -- IDM30512CW100 | The high power transistor part number IDM30512CW100 is designed for VHF/UHF-Band systems operating over the frequency band 30-512 under CW conditions. Over the instantaneous operating band of 30-512 this dual... |
| VDMOS Broadband Transistor -- IDM30512CW50 | The high power transistor part number IDM30512CW50 is designed for VHF/UHF-Band systems operating over the frequency band 30-512 under CW conditions. Over the instantaneous operating band of 30-512 this dual... |
| VDMOS Broadband Transistor -- IDM500CW200 | The high power transistor part number IDM500CW200 is designed for VHF/UHF-Band systems operating at 1-500 . Operating at CW conditions, this dual MOSFET device supplies a minimum of 200 watts... |
| VDMOS Broadband Transistor -- IDM500CW300 | The high power transistor part number IDM500CW300 is designed for VHF/UHF-Band systems operating at 1-500 . Operating at CW conditions, this dual MOSFET device supplies a minimum of 300 watts... |
| LDMOS L-Band Avionics Transistor -- ILD0912M150HV | The high power transistor part number ILD0912M150HV is designed for Avionics systems operating at 960-1215 . Operating at 10ìs, 10% pulse conditions this LDMOS FET device supplies a minimum of... |
| LDMOS L-Band Avionics Transistor -- ILD0912M15HV | The high power transistor part number ILD0912M15HV is designed for Avionics systems operating at 960-1215 . Operating at 10Es, 10% pulse conditions this LDMOS FET device supplies a minimum of... |
| LDMOS L-Band Avionics Transistor -- ILD0912M60 | The high power transistor part number ILD0912M60 is designed for the frequency band 960-1215 . Operating at 10us/10% pulse conditions this LDMOS FET device supplies a minimum of 60 watts... |
| LDMOS L-Band Avionics Transistor -- ILD1011M15HV | The high power transistor part number ILD1011M15HV is designed for Avionics systems operating at 1030-1090 . Operating at 507s, 2% pulse conditions this LDMOS FET device supplies a minimum of... |
| LDMOS L-Band Avionics Transistor -- ILD1011M550HV | The high power transistor part number ILD1011M550HV is designed for Avionics systems operating at 1030-1090 . Operating at 50ìs, 2% pulse conditions this LDMOS FET device supplies a minimum of... |
| LDMOS L-Band Avionics Transistor -- ILD1012S500HV | The high power transistor part number ILD1012S500HV is designed for Avionics DME systems operating at 1025-1150. Operating at 10ìs, 1% pulse conditions this LDMOS FET device supplies a minimum of... |
| LDMOS L-Band Radar Transistor -- ILD1214M10 | The high power transistor part number ILD1214M10 is designed for L-Band radar operating at 1200-1400 . This LDMOS FET device under 300us, 10% pulse format supplies a minimum of 10-15... |
| LDMOS L-Band Radar Transistor -- ILD1214M60 | The high power transistor part number ILD1214M60 is designed for the frequency band 1215-1400 . Operating 3at 300us-10% pulse conditions this LDMOS FET device supplies a minimum of 60 watts... |
| BiPolar S-Band Radar Transistor -- IB3134M15 | The medium power pulsed radar transistor device part number IB3134M15 is designed for S-Band radar systems operating over the instantaneous bandwidth of 3.1-3.4 GHz. While operating in class C mode... |
| BiPolar S-Band Radar Transistor -- IB3134M70 | The medium power pulsed radar transistor device part number IB3134M70 is designed for S-Band radar systems operating over the instantaneous bandwidth of 3.1-3.4 GHz. While operating in class C mode... |