Integra Technologies, Inc. BiPolar L-Band Avionics Transistor IB1011M140

Description
L-Band Avionics Transistor The high power pulsed avionics transistor part number IB1011M140 is designed for L-Band avionics systems operating at 1030 and 1090 . While operating in class C mode under Mode S at VCC = 50V, this common base device supplies a minimum of 140 watts of peak pulse power. It utilizes a low loss internal input impedance matching structure to yield maximum device gain and to ease the implementation of external matching circuitry. The new generation bipolar transistor geometry utilizes a gold metallization system to achieve maximum reliability. Emitter ballast resistance is incorporated on the active cell for optimum thermal distribution and maximum reliability. All devices are
  • BiPolar L-Band Avionics Transistor - IB1011M140 - Integra Technologies, Inc.
    Integra Technologies, Inc.
Description
L-Band Avionics Transistor The high power pulsed avionics transistor part number IB1011M140 is designed for L-Band avionics systems operating at 1030 and 1090 . While operating in class C mode under Mode S at VCC = 50V, this common base device supplies a minimum of 140 watts of peak pulse power. It utilizes a low loss internal input impedance matching structure to yield maximum device gain and to ease the implementation of external matching circuitry. The new generation bipolar transistor geometry utilizes a gold metallization system to achieve maximum reliability. Emitter ballast resistance is incorporated on the active cell for optimum thermal distribution and maximum reliability. All devices are

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BiPolar L-Band Avionics Transistor - IB1011M140 - Integra Technologies, Inc.
Integra Technologies, Inc.
El Segundo, CA, USA
BiPolar L-Band Avionics Transistor
IB1011M140
BiPolar L-Band Avionics Transistor IB1011M140
L-Band Avionics Transistor The high power pulsed avionics transistor part number IB1011M140 is designed for L-Band avionics systems operating at 1030 and 1090 . While operating in class C mode under Mode S at VCC = 50V, this common base device supplies a minimum of 140 watts of peak pulse power. It utilizes a low loss internal input impedance matching structure to yield maximum device gain and to ease the implementation of external matching circuitry. The new generation bipolar transistor geometry utilizes a gold metallization system to achieve maximum reliability. Emitter ballast resistance is incorporated on the active cell for optimum thermal distribution and maximum reliability. All devices are

L-Band Avionics Transistor The high power pulsed avionics transistor part number IB1011M140 is designed for L-Band avionics systems operating at 1030 and 1090 . While operating in class C mode under Mode S at VCC = 50V, this common base device supplies a minimum of 140 watts of peak pulse power. It utilizes a low loss internal input impedance matching structure to yield maximum device gain and to ease the implementation of external matching circuitry. The new generation bipolar transistor geometry utilizes a gold metallization system to achieve maximum reliability. Emitter ballast resistance is incorporated on the active cell for optimum thermal distribution and maximum reliability. All devices are

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Technical Specifications

  Integra Technologies, Inc.
Product Category Bipolar RF Transistors
Product Number IB1011M140
Product Name BiPolar L-Band Avionics Transistor
Transistor Technology / Material GaN
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