Part number ILT2731M30 is a high power transistor which is internally matched to 50 ohms. It is designed for S-Band radar systems and operates over the instantaneous bandwidth of 2.7-3.1 GHz. It utilizes gold metal LDMOS transistor technology operating in common source configuration. Production RF performance screening is performed at the 100% level while operating under class AB bias (IDQ = 10mA) with a 300us pulse width at 10% duty. The device is operable under a wide range of biasing and pulsing conditions. This device is rated for a peak output power level of PPEAK = 30W @ 10% duty factor. This corresponds to an average power PAVG = 3W.
| Integra Technologies, Inc. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | ILT2731M30 |
| Product Name | LDMOS S-Band Radar Transistor |
| Transistor Technology / Material | GaN |
