The high power transistor part number ILD1214M60 is designed for the frequency band 1215-1400 . Operating 3at 300us-10% pulse conditions this LDMOS FET device supplies a minimum of 60 watts of power across the instantaneous operating bandwidth of 1215-1400 . All devices are 100% screened for large signal RF parameters.
| Integra Technologies, Inc. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | ILD1214M60 |
| Product Name | LDMOS L-Band Radar Transistor |
| Transistor Technology / Material | GaN |
