The high power pulsed radar transistor device part number IB2731M110 is designed for S-Band radar systems operating over the instantaneous bandwidth of 2.7-3.1 GHz. While operating in class C mode this common base device supplies a minimum of 110 watts of peak pulse power under the conditions of 200ìs pulse width and 10% duty cycle. All devices are 100% screened for large signal RF parameters, including power gain compression. Excellent spectral stability into output mismatch over a broad input power range make it ideal for use in reliable high power solid state transmitters. The test fixture includes a passive amplitude sloping network to insure that the device is not overdriven as the operating frequency decreases.
| Integra Technologies, Inc. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | IB2731M110 |
| Product Name | BiPolar S-Band Radar Transistor |
| Transistor Technology / Material | GaN |
