Integra Technologies, Inc. GaN L-Band Avionics Transistor IGN1011M800

Description
■ GaN on SiC HEMT Technology ■ POUT-PK = 800W @ 128us/2%/50V ■ 1.030GHz and 1.090GHz Operating Frequency ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate Voltage and Bias Sequencing Required ■ Specified For Use Under Class AB Operation ■ Metal Based Package Sealed With Ceramic-Epoxy Lid ■ Gold Metallization System: Chip - Wire Bond - Package ■ Package Size: W=1.340′ (34.04mm), L=0.385′ (9.78mm) ■ 100% High Power RF Tested in Fixed Tuned RF Test Fixture
  • GaN L-Band Avionics Transistor - IGN1011M800 - Integra Technologies, Inc.
    Integra Technologies, Inc.
Description
■ GaN on SiC HEMT Technology ■ POUT-PK = 800W @ 128us/2%/50V ■ 1.030GHz and 1.090GHz Operating Frequency ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate Voltage and Bias Sequencing Required ■ Specified For Use Under Class AB Operation ■ Metal Based Package Sealed With Ceramic-Epoxy Lid ■ Gold Metallization System: Chip - Wire Bond - Package ■ Package Size: W=1.340′ (34.04mm), L=0.385′ (9.78mm) ■ 100% High Power RF Tested in Fixed Tuned RF Test Fixture

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GaN L-Band Avionics Transistor - IGN1011M800 - Integra Technologies, Inc.
Integra Technologies, Inc.
El Segundo, CA, USA
GaN L-Band Avionics Transistor
IGN1011M800
GaN L-Band Avionics Transistor IGN1011M800
■ GaN on SiC HEMT Technology ■ POUT-PK = 800W @ 128us/2%/50V ■ 1.030GHz and 1.090GHz Operating Frequency ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate Voltage and Bias Sequencing Required ■ Specified For Use Under Class AB Operation ■ Metal Based Package Sealed With Ceramic-Epoxy Lid ■ Gold Metallization System: Chip - Wire Bond - Package ■ Package Size: W=1.340′ (34.04mm), L=0.385′ (9.78mm) ■ 100% High Power RF Tested in Fixed Tuned RF Test Fixture

■ GaN on SiC HEMT Technology
■ POUT-PK = 800W @ 128us/2%/50V
■ 1.030GHz and 1.090GHz Operating Frequency
■ Internal Impedance Pre-matched Device
■ Depletion Mode Device
■ Negative Gate Voltage and Bias Sequencing Required
■ Specified For Use Under Class AB Operation
■ Metal Based Package Sealed With Ceramic-Epoxy Lid
■ Gold Metallization System: Chip - Wire Bond - Package
■ Package Size: W=1.340″ (34.04mm), L=0.385″ (9.78mm)
■ 100% High Power RF Tested in Fixed Tuned RF Test Fixture

Supplier's Site

Technical Specifications

  Integra Technologies, Inc.
Product Category RF MOSFET Transistors
Product Number IGN1011M800
Product Name GaN L-Band Avionics Transistor
Transistor Technology / Material GaN
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