■ GaN on SiC HEMT Technology
■ POUT-PK ≥ 115W @ 3ms/30%/46V
■ 3.1-3.5GHz Instantaneous Operating Frequency Range
■ Input and Output Internal Impedance Pre-matched Device
■ Depletion Mode Device
■ Negative Gate Voltage and Bias Sequencing Required
■ Specified For Use Under Class AB Operation
■ Metal Based Package Sealed With Ceramic-Epoxy Lid
■ Gold Metallization System: Chip - Wire Bond - Package
■ Package Size: W=0.800″ (20.32mm), L=0.400″ (10.16mm)
■ 100% High Power RF Tested in Broadband RF Test Fixture
| Integra Technologies, Inc. | |
|---|---|
| Product Category | RF MOSFET Transistors |
| Product Number | IGN3135L115 |
| Product Name | GaN S-Band Radar Transistor |
| Transistor Technology / Material | GaN |
