Part number ILT2731M130 is a high power transistor which is internally matched to 50 ohms. It is designed for S-Band radar systems and operates over the instantaneous bandwidth of 2.7-3.1 GHz. It utilizes gold metal LDMOS transistor technology operating in common source configuration. It may be operated in class B, AB and A mode. It is operable over nearly any pulse width and duty factor. Under 300us / 10% pulsed operation it can be used to supply a minimum of 130 watts of peak pulse power over the instantaneous frequency range of 2.7-3.1 GHz. All devices are 100% screened for large signal RF parameters. This device is rated for a peak output power level of PPEAK = 130W @ 10% duty factor. This corresponds to an average power PAVG = 13W.
| Integra Technologies, Inc. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | ILT2731M130 |
| Product Name | LDMOS S-Band Radar Transistor |
| Transistor Technology / Material | GaN |
