The high power pulsed radar transistor device part number IB226MH160 is designed for S-Band radar systems operating over the instantaneous bandwidth of 2.25-2.55 GHz. While operating in class C mode this common base device supplies a minimum of 160 watts of peak pulse power under the conditions of 200ƒÝs pulse width and 10% duty cycle. All devices are 100% screened for large signal RF parameters, including power gain compression. This device is rated for a peak output power level of PPEAK = 160W @ 10% duty factor. This corresponds to an average power PAVG = 16W.
| Integra Technologies, Inc. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | IB2226MH160 |
| Product Name | BiPolar S-Band Radar Transistor |
| Transistor Technology / Material | GaN |
