Integra Technologies, Inc. LDMOS L-Band Radar Transistor ILD1214EL200

Description
The high power pulsed transistor part number ILD1214EL200 is designed for L-Band systems operating at 1.215–1.400 GHz. Operating at a pulse width of 5ms with a duty factor of 20%, this dual LDMOS device supplies a minimum of 200 watts of peak pulse power across the instantaneous operating bandwidth of 1.215- 1.400 GHz. Fabricated with all gold metal contact, wire bonding and package for maximum reliability. All devices are 100% screened for large signal RF parameters in the broadband RF test fixture across the entire specified operating bandwidth with no variable or external tuning.
  • LDMOS L-Band Radar Transistor - ILD1214EL200 - Integra Technologies, Inc.
    Integra Technologies, Inc.
Description
The high power pulsed transistor part number ILD1214EL200 is designed for L-Band systems operating at 1.215–1.400 GHz. Operating at a pulse width of 5ms with a duty factor of 20%, this dual LDMOS device supplies a minimum of 200 watts of peak pulse power across the instantaneous operating bandwidth of 1.215- 1.400 GHz. Fabricated with all gold metal contact, wire bonding and package for maximum reliability. All devices are 100% screened for large signal RF parameters in the broadband RF test fixture across the entire specified operating bandwidth with no variable or external tuning.

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LDMOS L-Band Radar Transistor - ILD1214EL200 - Integra Technologies, Inc.
Integra Technologies, Inc.
El Segundo, CA, USA
LDMOS L-Band Radar Transistor
ILD1214EL200
LDMOS L-Band Radar Transistor ILD1214EL200
The high power pulsed transistor part number ILD1214EL200 is designed for L-Band systems operating at 1.215–1.400 GHz. Operating at a pulse width of 5ms with a duty factor of 20%, this dual LDMOS device supplies a minimum of 200 watts of peak pulse power across the instantaneous operating bandwidth of 1.215- 1.400 GHz. Fabricated with all gold metal contact, wire bonding and package for maximum reliability. All devices are 100% screened for large signal RF parameters in the broadband RF test fixture across the entire specified operating bandwidth with no variable or external tuning.

The high power pulsed transistor part number ILD1214EL200 is designed for L-Band systems operating at 1.215–1.400 GHz. Operating at a pulse width of 5ms with a duty factor of 20%, this dual LDMOS device supplies a minimum of 200 watts of peak pulse power across the instantaneous operating bandwidth of 1.215- 1.400 GHz. Fabricated with all gold metal contact, wire bonding and package for maximum reliability. All devices are 100% screened for large signal RF parameters in the broadband RF test fixture across the entire specified operating bandwidth with no variable or external tuning.

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Technical Specifications

  Integra Technologies, Inc.
Product Category Bipolar RF Transistors
Product Number ILD1214EL200
Product Name LDMOS L-Band Radar Transistor
Transistor Technology / Material GaN
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