Integra Technologies, Inc. LDMOS L-Band Avionics Transistor ILD0912M150HV

Description
The high power transistor part number ILD0912M150HV is designed for Avionics systems operating at 960-1215 . Operating at 10ìs, 10% pulse conditions this LDMOS FET device supplies a minimum of 150 watts of power across the instantaneous operating bandwidth of 960-1215 . All devices are 100% screened for large signal RF parameters.
Description
The high power transistor part number ILD0912M150HV is designed for Avionics systems operating at 960-1215 . Operating at 10ìs, 10% pulse conditions this LDMOS FET device supplies a minimum of 150 watts of power across the instantaneous operating bandwidth of 960-1215 . All devices are 100% screened for large signal RF parameters.

Suppliers

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LDMOS L-Band Avionics Transistor - ILD0912M150HV - Integra Technologies, Inc.
El Segundo, CA, USA
LDMOS L-Band Avionics Transistor
ILD0912M150HV
LDMOS L-Band Avionics Transistor ILD0912M150HV
The high power transistor part number ILD0912M150HV is designed for Avionics systems operating at 960-1215 . Operating at 10ìs, 10% pulse conditions this LDMOS FET device supplies a minimum of 150 watts of power across the instantaneous operating bandwidth of 960-1215 . All devices are 100% screened for large signal RF parameters.

The high power transistor part number ILD0912M150HV is designed for Avionics systems operating at 960-1215 . Operating at 10ìs, 10% pulse conditions this LDMOS FET device supplies a minimum of 150 watts of power across the instantaneous operating bandwidth of 960-1215 . All devices are 100% screened for large signal RF parameters.

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Technical Specifications

  Integra Technologies, Inc.
Product Category Bipolar RF Transistors
Product Number ILD0912M150HV
Product Name LDMOS L-Band Avionics Transistor
Transistor Technology / Material GaN
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