■ Silicon LDMOS Technology
■ POUT-PK = 60W @ 300us/20%/32V; (PAVG = 12W)
■ 2.7-3.1GHz Instantaneous Operating Frequency Range
■ Internal Impedance Pre-matched Device
■ Specified For Use Under Class AB Operation
■ Metal Based Package Sealed With Ceramic-Epoxy Lid
■ Gold Metallization System: Chip - Wire Bond - Package
■ Package Size: W=0.800″ (20.32mm), L=0.230″ (5.84mm)
■ 100% High Power RF Tested in Broadband RF Test Fixture
| Integra Technologies, Inc. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | ILD2731M60 |
| Product Name | LDMOS S-Band Radar Transistor |
| Transistor Technology / Material | GaN |
