The high power pulsed avionics transistor device part number IB1011S350 is designed for L-Band radar systems operating between 1030 and 1090. While operating in class C mode this common base device supplies a minimum of 350 watts of peak pulse power under the conditions of 10ìs pulse width, 1% duty cycle. All devices are 100% screened for large signal RF parameters.
| Integra Technologies, Inc. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | IB1011S350 |
| Product Name | BiPolar L-Band Avionics Transistor |
| Transistor Technology / Material | GaN |
