The high power pulsed transistor part number IB3000S60 is designed to operate in class C mode. This common base device supplies a minimum of 60 watts of peak pulse power under the conditions of 12ìs pulse width and 1% duty cycle. All devices are 100% screened for large signal RF parameters. Excellent spectral stability into output mismatch over a broad input power range make it ideal for use in reliable high power solid state amplifiers. It is designed to be used as a stand-alone device or to drive two IB3000S200 devices. This device is rated for a peak output power level of PPEAK = 60W @ 1% duty factor. This corresponds to an average power PAVG = 0.6W.
| Integra Technologies, Inc. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | IB3000S60 |
| Product Name | ISM Pulse Transistor |
| Transistor Technology / Material | GaN |
