Integra Technologies, Inc. ISM Pulse Transistor IGN2998S500

Description
■ GaN on SiC HEMT Technology ■ POUT-PK = 500W @ 8us/1%/50V; (PAVG = 5W) ■ 2.998GHz Operating Frequency ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate Voltage and Bias Sequencing Required ■ Specified For Use Under Class AB Operation ■ Metal Based Package Sealed With Ceramic-Epoxy Lid ■ Gold Metallization System: Chip - Wire Bond - Package ■ Package Size: W=1.070′ (27.18mm), L=0.385′ (9.78mm) ■ 100% High Power RF Tested in Fixed Tuned RF Test Fixture
  • ISM Pulse Transistor - IGN2998S500 - Integra Technologies, Inc.
    Integra Technologies, Inc.
Description
■ GaN on SiC HEMT Technology ■ POUT-PK = 500W @ 8us/1%/50V; (PAVG = 5W) ■ 2.998GHz Operating Frequency ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate Voltage and Bias Sequencing Required ■ Specified For Use Under Class AB Operation ■ Metal Based Package Sealed With Ceramic-Epoxy Lid ■ Gold Metallization System: Chip - Wire Bond - Package ■ Package Size: W=1.070′ (27.18mm), L=0.385′ (9.78mm) ■ 100% High Power RF Tested in Fixed Tuned RF Test Fixture

Suppliers

Company
Product
Description
Supplier Links
ISM Pulse Transistor - IGN2998S500 - Integra Technologies, Inc.
Integra Technologies, Inc.
El Segundo, CA, USA
ISM Pulse Transistor
IGN2998S500
ISM Pulse Transistor IGN2998S500
■ GaN on SiC HEMT Technology ■ POUT-PK = 500W @ 8us/1%/50V; (PAVG = 5W) ■ 2.998GHz Operating Frequency ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate Voltage and Bias Sequencing Required ■ Specified For Use Under Class AB Operation ■ Metal Based Package Sealed With Ceramic-Epoxy Lid ■ Gold Metallization System: Chip - Wire Bond - Package ■ Package Size: W=1.070′ (27.18mm), L=0.385′ (9.78mm) ■ 100% High Power RF Tested in Fixed Tuned RF Test Fixture

■ GaN on SiC HEMT Technology
■ POUT-PK = 500W @ 8us/1%/50V; (PAVG = 5W)
■ 2.998GHz Operating Frequency
■ Internal Impedance Pre-matched Device
■ Depletion Mode Device
■ Negative Gate Voltage and Bias Sequencing Required
■ Specified For Use Under Class AB Operation
■ Metal Based Package Sealed With Ceramic-Epoxy Lid
■ Gold Metallization System: Chip - Wire Bond - Package
■ Package Size: W=1.070″ (27.18mm), L=0.385″ (9.78mm)
■ 100% High Power RF Tested in Fixed Tuned RF Test Fixture

Supplier's Site

Technical Specifications

  Integra Technologies, Inc.
Product Category Bipolar RF Transistors
Product Number IGN2998S500
Product Name ISM Pulse Transistor
Transistor Technology / Material GaN
Unlock Full Specs
to access all available technical data