The high power transistor part number ILD0912M60 is designed for the frequency band 960-1215 . Operating at 10us/10% pulse conditions this LDMOS FET device supplies a minimum of 60 watts of power across the instantaneous operating bandwidth of 960-1215 . All devices are 100% screened for large signal RF parameters.
| Integra Technologies, Inc. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | ILD0912M60 |
| Product Name | LDMOS L-Band Avionics Transistor |
| Transistor Technology / Material | GaN |