Integra Technologies, Inc. LDMOS L-Band Avionics Transistor ILD0912M60

Description
The high power transistor part number ILD0912M60 is designed for the frequency band 960-1215 . Operating at 10us/10% pulse conditions this LDMOS FET device supplies a minimum of 60 watts of power across the instantaneous operating bandwidth of 960-1215 . All devices are 100% screened for large signal RF parameters.
Description
The high power transistor part number ILD0912M60 is designed for the frequency band 960-1215 . Operating at 10us/10% pulse conditions this LDMOS FET device supplies a minimum of 60 watts of power across the instantaneous operating bandwidth of 960-1215 . All devices are 100% screened for large signal RF parameters.

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Description
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LDMOS L-Band Avionics Transistor - ILD0912M60 - Integra Technologies, Inc.
El Segundo, CA, USA
LDMOS L-Band Avionics Transistor
ILD0912M60
LDMOS L-Band Avionics Transistor ILD0912M60
The high power transistor part number ILD0912M60 is designed for the frequency band 960-1215 . Operating at 10us/10% pulse conditions this LDMOS FET device supplies a minimum of 60 watts of power across the instantaneous operating bandwidth of 960-1215 . All devices are 100% screened for large signal RF parameters.

The high power transistor part number ILD0912M60 is designed for the frequency band 960-1215 . Operating at 10us/10% pulse conditions this LDMOS FET device supplies a minimum of 60 watts of power across the instantaneous operating bandwidth of 960-1215 . All devices are 100% screened for large signal RF parameters.

Supplier's Site

Technical Specifications

  Integra Technologies, Inc.
Product Category Bipolar RF Transistors
Product Number ILD0912M60
Product Name LDMOS L-Band Avionics Transistor
Transistor Technology / Material GaN
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