Integra Technologies, Inc. VDMOS Broadband Transistor IDM175CW300

Description
The high power silicon transistor part number IDM175CW300 is designed for VHF-Band systems operating at 1-200 . Operating at CW conditions, this dual MOSFET device supplies a minimum of 300 watts of power across the instantaneous operating bandwidth of 1-200 . All devices are 100% screened for large signal RF parameters.
  • VDMOS Broadband Transistor - IDM175CW300 - Integra Technologies, Inc.
    Integra Technologies, Inc.
Description
The high power silicon transistor part number IDM175CW300 is designed for VHF-Band systems operating at 1-200 . Operating at CW conditions, this dual MOSFET device supplies a minimum of 300 watts of power across the instantaneous operating bandwidth of 1-200 . All devices are 100% screened for large signal RF parameters.

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VDMOS Broadband Transistor - IDM175CW300 - Integra Technologies, Inc.
Integra Technologies, Inc.
El Segundo, CA, USA
VDMOS Broadband Transistor
IDM175CW300
VDMOS Broadband Transistor IDM175CW300
The high power silicon transistor part number IDM175CW300 is designed for VHF-Band systems operating at 1-200 . Operating at CW conditions, this dual MOSFET device supplies a minimum of 300 watts of power across the instantaneous operating bandwidth of 1-200 . All devices are 100% screened for large signal RF parameters.

The high power silicon transistor part number IDM175CW300 is designed for VHF-Band systems operating at 1-200 . Operating at CW conditions, this dual MOSFET device supplies a minimum of 300 watts of power across the instantaneous operating bandwidth of 1-200 . All devices are 100% screened for large signal RF parameters.

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Technical Specifications

  Integra Technologies, Inc.
Product Category Power MOSFET
Product Number IDM175CW300
Product Name VDMOS Broadband Transistor
Transistor Technology / Material GaN
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