Integra Technologies, Inc. BiPolar L-Band Radar Transistor IB1416S650

Description
The high power pulsed avionics transistor part number IB1416S650 is designed for L-Band avionics systems operating at 1450 to 1550 . While operating in class C mode under 8s, 1%, pulse conditions at VCC= 50V, this common base device supplies a minimum of 600 watts of peak pulse power. It utilizes a low loss internal input and output impedance matching structure to yield maximum device gain and to ease the implementation of external matching circuitry. The new generation bipolar transistor geometry utilizes a gold metallization system to achieve maximum reliability. Emitter ballast resistance is incorporated on the active cell for optimum thermal distribution and maximum reliability. All devices are 100% screened for large signal RF parameters.
  • BiPolar L-Band Radar Transistor - IB1416S650 - Integra Technologies, Inc.
    Integra Technologies, Inc.
Description
The high power pulsed avionics transistor part number IB1416S650 is designed for L-Band avionics systems operating at 1450 to 1550 . While operating in class C mode under 8s, 1%, pulse conditions at VCC= 50V, this common base device supplies a minimum of 600 watts of peak pulse power. It utilizes a low loss internal input and output impedance matching structure to yield maximum device gain and to ease the implementation of external matching circuitry. The new generation bipolar transistor geometry utilizes a gold metallization system to achieve maximum reliability. Emitter ballast resistance is incorporated on the active cell for optimum thermal distribution and maximum reliability. All devices are 100% screened for large signal RF parameters.

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BiPolar L-Band Radar Transistor - IB1416S650 - Integra Technologies, Inc.
Integra Technologies, Inc.
El Segundo, CA, USA
BiPolar L-Band Radar Transistor
IB1416S650
BiPolar L-Band Radar Transistor IB1416S650
The high power pulsed avionics transistor part number IB1416S650 is designed for L-Band avionics systems operating at 1450 to 1550 . While operating in class C mode under 8s, 1%, pulse conditions at VCC= 50V, this common base device supplies a minimum of 600 watts of peak pulse power. It utilizes a low loss internal input and output impedance matching structure to yield maximum device gain and to ease the implementation of external matching circuitry. The new generation bipolar transistor geometry utilizes a gold metallization system to achieve maximum reliability. Emitter ballast resistance is incorporated on the active cell for optimum thermal distribution and maximum reliability. All devices are 100% screened for large signal RF parameters.

The high power pulsed avionics transistor part number IB1416S650 is
designed for L-Band avionics systems operating at 1450 to 1550 .
While operating in class C mode under 8s, 1%, pulse conditions at
VCC= 50V, this common base device supplies a minimum of 600 watts of
peak pulse power. It utilizes a low loss internal input and output
impedance matching structure to yield maximum device gain and to
ease the implementation of external matching circuitry. The new
generation bipolar transistor geometry utilizes a gold metallization
system to achieve maximum reliability. Emitter ballast resistance is
incorporated on the active cell for optimum thermal distribution and
maximum reliability. All devices are 100% screened for large signal RF
parameters.

Supplier's Site

Technical Specifications

  Integra Technologies, Inc.
Product Category Bipolar RF Transistors
Product Number IB1416S650
Product Name BiPolar L-Band Radar Transistor
Transistor Technology / Material GaN
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