Integra Technologies, Inc. LDMOS S-Band Radar Transistor ILT2731M15

Description
Part number ILT2731M15 is a high power transistor which is internally matched to 50 ohms. It is designed for S-Band radar systems and operates over the instantaneous bandwidth of 2.7-3.1 GHz. It utilizes gold metal LDMOS transistor technology operating in common source configuration. Production RF performance screening is performed at the 100% level while operating under class AB bias (IDQ = 10mA) with a 300us pulse width at 10% duty. The device is operable under a wide range of biasing and pulsing conditions. This device is rated for a peak output power level of PPEAK = 15W @ 10% duty factor. This corresponds to an average power PAVG = 1.5W.
Description
Part number ILT2731M15 is a high power transistor which is internally matched to 50 ohms. It is designed for S-Band radar systems and operates over the instantaneous bandwidth of 2.7-3.1 GHz. It utilizes gold metal LDMOS transistor technology operating in common source configuration. Production RF performance screening is performed at the 100% level while operating under class AB bias (IDQ = 10mA) with a 300us pulse width at 10% duty. The device is operable under a wide range of biasing and pulsing conditions. This device is rated for a peak output power level of PPEAK = 15W @ 10% duty factor. This corresponds to an average power PAVG = 1.5W.

Suppliers

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LDMOS S-Band Radar Transistor - ILT2731M15 - Integra Technologies, Inc.
El Segundo, CA, USA
LDMOS S-Band Radar Transistor
ILT2731M15
LDMOS S-Band Radar Transistor ILT2731M15
Part number ILT2731M15 is a high power transistor which is internally matched to 50 ohms. It is designed for S-Band radar systems and operates over the instantaneous bandwidth of 2.7-3.1 GHz. It utilizes gold metal LDMOS transistor technology operating in common source configuration. Production RF performance screening is performed at the 100% level while operating under class AB bias (IDQ = 10mA) with a 300us pulse width at 10% duty. The device is operable under a wide range of biasing and pulsing conditions. This device is rated for a peak output power level of PPEAK = 15W @ 10% duty factor. This corresponds to an average power PAVG = 1.5W.

Part number ILT2731M15 is a high power transistor which is
internally matched to 50 ohms. It is designed for S-Band radar
systems and operates over the instantaneous bandwidth of 2.7-3.1
GHz. It utilizes gold metal LDMOS transistor technology operating
in common source configuration. Production RF performance
screening is performed at the 100% level while operating under
class AB bias (IDQ = 10mA) with a 300us pulse width at 10% duty.
The device is operable under a wide range of biasing and pulsing
conditions. This device is rated for a peak output power level of
PPEAK = 15W @ 10% duty factor. This corresponds to an average
power PAVG = 1.5W.

Supplier's Site

Technical Specifications

  Integra Technologies, Inc.
Product Category Bipolar RF Transistors
Product Number ILT2731M15
Product Name LDMOS S-Band Radar Transistor
Transistor Technology / Material GaN
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