Integra Technologies, Inc. VDMOS Broadband Transistor IDM165L650

Description
The high power pulsed transistor part number IDM165L650 is designed for VHF-Band systems operating at 125-167 . Operating at a pulse width of 1ms with a duty factor of 20%, this dual MOSFET device supplies a minimum of 650 watts of peak pulse power at a fixed input power of 80 watts across the instantaneous operating bandwidth of 125-167 . All devices are 100% screened for large signal RF parameters in the broadband RF test fixture across the entire specified operating bandwidth with no variable or external tuning.
  • VDMOS Broadband Transistor - IDM165L650 - Integra Technologies, Inc.
    Integra Technologies, Inc.
Description
The high power pulsed transistor part number IDM165L650 is designed for VHF-Band systems operating at 125-167 . Operating at a pulse width of 1ms with a duty factor of 20%, this dual MOSFET device supplies a minimum of 650 watts of peak pulse power at a fixed input power of 80 watts across the instantaneous operating bandwidth of 125-167 . All devices are 100% screened for large signal RF parameters in the broadband RF test fixture across the entire specified operating bandwidth with no variable or external tuning.

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VDMOS Broadband Transistor - IDM165L650 - Integra Technologies, Inc.
Integra Technologies, Inc.
El Segundo, CA, USA
VDMOS Broadband Transistor
IDM165L650
VDMOS Broadband Transistor IDM165L650
The high power pulsed transistor part number IDM165L650 is designed for VHF-Band systems operating at 125-167 . Operating at a pulse width of 1ms with a duty factor of 20%, this dual MOSFET device supplies a minimum of 650 watts of peak pulse power at a fixed input power of 80 watts across the instantaneous operating bandwidth of 125-167 . All devices are 100% screened for large signal RF parameters in the broadband RF test fixture across the entire specified operating bandwidth with no variable or external tuning.

The high power pulsed transistor part number IDM165L650 is designed for VHF-Band systems operating at 125-167 . Operating at a pulse width of 1ms with a duty factor of 20%, this dual MOSFET device supplies a minimum of 650 watts of peak pulse power at a fixed input power of 80 watts across the instantaneous operating bandwidth of 125-167 . All devices are 100% screened for large signal RF parameters in the broadband RF test fixture across the entire specified operating bandwidth with no variable or external tuning.

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Technical Specifications

  Integra Technologies, Inc.
Product Category Power MOSFET
Product Number IDM165L650
Product Name VDMOS Broadband Transistor
Transistor Technology / Material GaN
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