Integra Technologies, Inc. GaN L-Band Avionics Transistor IGN1011L70

■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 70W @ ELM Mode S / 6.4% / 50V ■ 1.030-1.090 GHz Instantaneous Operating Frequency Range ■ Internally Un-matched Device ■ Depletion Mode Device ■ Negative Gate Voltage and Bias Sequencing Required ■ Specified For Use Under Class AB Operation ■ Metal Based Package Sealed With Ceramic-Epoxy Lid ■ Gold Metallization System: Chip - Wire Bond - Package ■ Package Size: W=0.800′ (20.32mm), L=0.230′ (5.84mm) ■ “S” Package Size: W=0.390′ (9.91mm), L=0.230′ (5.84mm) ■ 100% High Power RF Tested in Broadband RF Test Fixture