■ Silicon LDMOS Technology
■ POUT-PK = 200W @ ELM Mode S/6.4%/50V; (PAVG = 12.8W)
■ 1030 or 1090 Operating Frequency
■ Internal Impedance Pre-matched Device
■ Specified For Use Under Class AB Operation
■ Metal Based Package Sealed With Ceramic-Epoxy Lid
■ Gold Metallization System: Chip - Wire Bond - Package
■ Package Size: W=1.070″ (27.17mm), L=0.400″ (20.30mm)
■ 100% High Power RF Tested in Broadband RF Test Fixture
| Integra Technologies, Inc. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | ILD1011L200HV |
| Product Name | LDMOS L-Band Avionics Transistor |
| Transistor Technology / Material | GaN |
