Integra Technologies, Inc. LDMOS S-Band Radar Transistor ILT3035M30

Description
Part number ILT3035M30 is a miniaturized power amplifier which is internally matched to 50 ohms. It is designed for S-Band radar systems and operates over the instantaneous bandwidth of 3.0-3.5 GHz. It utilizes gold metal LDMOS transistor technology operating in common source configuration. Production RF performance screening is performed at the 100% level while operating under class AB bias (IDQ = 10mA) with a 300us pulse width at 10% duty. The device is operable under a wide range of biasing and pulsing conditions.
Description
Part number ILT3035M30 is a miniaturized power amplifier which is internally matched to 50 ohms. It is designed for S-Band radar systems and operates over the instantaneous bandwidth of 3.0-3.5 GHz. It utilizes gold metal LDMOS transistor technology operating in common source configuration. Production RF performance screening is performed at the 100% level while operating under class AB bias (IDQ = 10mA) with a 300us pulse width at 10% duty. The device is operable under a wide range of biasing and pulsing conditions.

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LDMOS S-Band Radar Transistor - ILT3035M30 - Integra Technologies, Inc.
El Segundo, CA, USA
LDMOS S-Band Radar Transistor
ILT3035M30
LDMOS S-Band Radar Transistor ILT3035M30
Part number ILT3035M30 is a miniaturized power amplifier which is internally matched to 50 ohms. It is designed for S-Band radar systems and operates over the instantaneous bandwidth of 3.0-3.5 GHz. It utilizes gold metal LDMOS transistor technology operating in common source configuration. Production RF performance screening is performed at the 100% level while operating under class AB bias (IDQ = 10mA) with a 300us pulse width at 10% duty. The device is operable under a wide range of biasing and pulsing conditions.

Part number ILT3035M30 is a miniaturized power amplifier which is internally matched to 50 ohms. It is designed for S-Band radar systems and operates over the instantaneous bandwidth of 3.0-3.5 GHz. It utilizes gold metal LDMOS transistor technology operating in common source configuration. Production RF performance screening is performed at the 100% level while operating under class AB bias (IDQ = 10mA) with a 300us pulse width at 10% duty. The device is operable under a wide range of biasing and pulsing conditions.

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Technical Specifications

  Integra Technologies, Inc.
Product Category Bipolar RF Transistors
Product Number ILT3035M30
Product Name LDMOS S-Band Radar Transistor
Transistor Technology / Material GaN
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