Integra Technologies, Inc. BiPolar L-Band Avionics Transistor IB450S500

Description
The high power pulsed radar transistor device part number IB450S500 is designed for UHF radar systems operating at 450 . While operating in class C mode this common base device supplies a minimum of 500 watts of peak pulse power under the conditions of 30ìs pulse width and 10% duty cycle. All devices are 100% screened for large signal RF parameters. Excellent spectral stability into output mismatch over a broad input power range make it ideal for use in reliable high power solid state transmitters.
  • BiPolar L-Band Avionics Transistor - IB450S500 - Integra Technologies, Inc.
    Integra Technologies, Inc.
Description
The high power pulsed radar transistor device part number IB450S500 is designed for UHF radar systems operating at 450 . While operating in class C mode this common base device supplies a minimum of 500 watts of peak pulse power under the conditions of 30ìs pulse width and 10% duty cycle. All devices are 100% screened for large signal RF parameters. Excellent spectral stability into output mismatch over a broad input power range make it ideal for use in reliable high power solid state transmitters.

Suppliers

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BiPolar L-Band Avionics Transistor - IB450S500 - Integra Technologies, Inc.
Integra Technologies, Inc.
El Segundo, CA, USA
BiPolar L-Band Avionics Transistor
IB450S500
BiPolar L-Band Avionics Transistor IB450S500
The high power pulsed radar transistor device part number IB450S500 is designed for UHF radar systems operating at 450 . While operating in class C mode this common base device supplies a minimum of 500 watts of peak pulse power under the conditions of 30ìs pulse width and 10% duty cycle. All devices are 100% screened for large signal RF parameters. Excellent spectral stability into output mismatch over a broad input power range make it ideal for use in reliable high power solid state transmitters.

The high power pulsed radar transistor device part number IB450S500 is designed for UHF radar systems operating at 450 . While operating in class C mode this common base device supplies a minimum of 500 watts of peak pulse power under the conditions of 30ìs pulse width and 10% duty cycle. All devices are 100% screened for large signal RF parameters. Excellent spectral stability into output mismatch over a broad input power range make it ideal for use in reliable high power solid state transmitters.

Supplier's Site

Technical Specifications

  Integra Technologies, Inc.
Product Category Bipolar RF Transistors
Product Number IB450S500
Product Name BiPolar L-Band Avionics Transistor
Transistor Technology / Material GaN
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