Part number ILD3135EL20 is designed for S-Band radar applications operating over the 3.1 – 3.5 GHz instantaneous frequency band. Under 16ms / 50% pulsing conditions it supplies a minimum of 20 watts (typically 25-30W) of peak output power with 10dB gain typically. Specified operation is with Class AB bias. The device also may be operated with Class A or B bias. When appropriately rated, it is operable under a wide range of pulse widths and duty factors. It operates with spectral purity into all phases of 3:1 output load VSWR. All devices are 100% screened for large signal RF parameters in a fixed tuned broadband matching circuit / test fixture. The use of external tuners is not allowed during screening. This device is rated for a peak output power level of PPEAK = 20W @ 50% duty factor. This corresponds to an average power PAVG = 10W.
| Integra Technologies, Inc. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | ILD3135EL20 |
| Product Name | LDMOS S-Band Radar Transistor |
| Transistor Technology / Material | GaN |
