Integra Technologies, Inc. Datasheets for RF MOSFET Transistors

MOSFET RF transistors are metal-oxide semiconductor field-effect transistors (MOSFETs) that are designed to handle high-power RF signals from devices such as stereo amplifiers, radio transmitters, TV monitors, etc.
RF MOSFET Transistors: Learn more

Product Name Notes
GaN S-Band Radar Transistor -- IGN2730M65 ■ GaN on SiC HEMT Technology ■ POUT-PK > 65W @ 300us/20%/32V ■ 2.7-3.0GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate...
GaN S-Band Radar Transistor -- IGN2429M400 ■ GaN on SiC HEMT Technology ■ POUT-PK = 400W @ 300us/10%/48V ■ 2.4-2.9GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate...
GaN S-Band Radar Transistor -- IGN2731M80 ■ GaN on SiC HEMT Technology ■ POUT-PK = 80W @ 100us/10%/40V ■ 2.7-3.1GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate...
GaN L-Band Avionics Transistor -- IGN0912CW300 ■ GaN on SiC HEMT Technology ■ POUT = 300W CW @ 36V ■ 960-1250 Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative...
GaN L-Band Radar Transistor -- IGN1214S1000B ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 1000W @ 5us/1.5%/50V ■ 1.2-1.4GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate...
GaN S-Band Radar Transistor -- IGN2731L10 ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 10W @ 40ms/50%/32V ■ 2.7-3.1GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate...
GaN S-Band Radar Transistor -- IGN3135L115 ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 115W @ 3ms/30%/46V ■ 3.1-3.5GHz Instantaneous Operating Frequency Range ■ Input and Output Internal Impedance Pre-matched Device ■ Depletion Mode Device...
GaN L-Band Radar Transistor -- IGN1214M120 ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 120W @ 300us/10%/50V ■ 1.2-1.4GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate...
GaN L-Band Avionics Transistor -- IGN1011L120 ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 120W @ 48 X 32us ON, 18us OFF/6.4% DC / 50V ■ 1.030 and 1.090 GHz Operating Frequency ■ Internal Impedance...
GaN L-Band Radar Transistor -- IGN1214L125 ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 125W @ 2ms/20%/50V ■ 1.2-1.4GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate...
GaN L-Band Avionics Transistor -- IGN0912L125A ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 125W @ 444 X 7us ON, 6us OFF / 22.7% DC/ 50V ■ 0.96-1.22GHz Instantaneous Operating Frequency Range ■ Internal Impedance...
GaN S-Band Radar Transistor -- IGN3135L12 ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 12W @ 3ms/30%/46V ■ 3.1-3.5GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate...
GaN L-Band Radar Transistor -- IGN1214L15 ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 12W @ 5ms/30%/50V ■ 1.2-1.4GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate...
GaN UHF Transistor -- IGN450M160 ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 160W @ 100us/10%/50V ■ 420 to 450 Operating Frequency ■ Internal Input Impedance Pre-matched Device ■ No Internal Output Match for...
GaN L-Band Radar Transistor -- IGN1214M250 ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 250W @ 300us/10%/50V ■ 1.2-1.4GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate...
GaN L-Band Avionics Transistor -- IGN0912L250M ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 250W @ 444 X 7uS ON, 6us OFF/ 22.7% DC / 50V OR 6ms, 20% DC / 50V ■ 0.96-1.22GHz Instantaneous...
GaN L-Band Avionics Transistor -- IGN0912L250A ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 250W @ 444 X 7uS ON, 6us OFF/ 22.7% DC / 50V ■ 0.96-1.22GHz Instantaneous Operating Frequency Range ■ Internal Impedance...
GaN L-Band Avionics Transistor -- IGN1012S30 ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 30W @ 32us / 2% / 50V ■ 1.025-1.150 GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion...
GaN L-Band Radar Transistor -- IGN1214L30 ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 30W @ 5ms/30%/42V ■ 1.2-1.4GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate...
GaN L-Band Radar Transistor -- IGN1214M380C ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 380W @ 150us/10%/50V ■ 1.21-1.40 GHz Instantaneous Operating Frequency Range ■ Internal Impedance Input Pre-matched Device ■ Depletion Mode Device ■
GaN L-Band Avionics Transistor -- IGN1030M40 ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 40W @ 300us / 10% / 50V ■ 1.030 Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode...
GaN L-Band Avionics Transistor -- IGN1012S40 ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 40W @ 32us / 2% / 50V ■ 1.025-1.150 GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion...
GaN L-Band Avionics Transistor -- IGN1012L40 ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 40W @ ELM Mode S / 6.4% / 50V ■ 1.025-1.150 GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device...
GaN L-Band Avionics Transistor -- IGN0912L45 ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 45W @ 444 x 7 us ON, 6us OFF, 22.7% / 50V ■ 0.96-1.22GHz Instantaneous Operating Frequency Range ■ Internal Impedance...
GaN L-Band Avionics Transistor -- IGN0912LM500 ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 500W @ 48 X 32uS ON, 18us OFF/ 6.4% DC / 50V ■ 0.96-1.22GHz Instantaneous Operating Frequency Range ■ Internal Impedance...
GaN L-Band Radar Transistor -- IGN1214M600 ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 600W @ 150us/10%/50V ■ 1.2-1.4GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate...
GaN L-Band Radar Transistor -- IGN1214M60 ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 60W @ 300us/10%/50V ■ 1.2-1.4GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate...
GaN L-Band Avionics Transistor -- IGN1011L60 ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 60W @ 48 X 32us ON, 18us OFF/6.4% DC / 50V ■ 1.030 and 1.090 GHz Operating Frequency ■ Internal Impedance...
GaN L-Band Radar Transistor -- IGN1214M650A ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 650W @ 300us/10%/50V ■ 1.2-1.4GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate...
GaN L-Band Avionics Transistor -- IGN1011L70 ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 70W @ ELM Mode S / 6.4% / 50V ■ 1.030-1.090 GHz Instantaneous Operating Frequency Range ■ Internally Un-matched Device ■
GaN C-Band Radar Transistor -- IGN5259M80R2 ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 80W @ 300us / 10% / 50V ■ 5.2-5.9GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode...
GaN L-Band Radar Transistor -- IGN1214L500B ■ GaN on SiC HEMT Technology ■ POUT-PK > 500W @ 2.0ms / 20% / 50V ■ 1.2-1.4GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode...
GaN L-Band Avionics Transistor -- IGN1012S1000 ■ GaN on SiC HEMT Technology ■ POUT-PK = 1000W @ 32us/2% / 50V ■ 1.025-1.150GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■
GaN L-Band Avionics Transistor -- IGN1030L1000 ■ GaN on SiC HEMT Technology ■ POUT-PK = 1000W @ ELM Mode S / 6.4% / 50V; (PAVG = 64W) ■ 1.030GHz Operating Frequency ■ Internal Impedance Pre-matched Device...
GaN L-Band Avionics Transistor -- IGN1011L1000R2 ■ GaN on SiC HEMT Technology ■ POUT-PK = 1000W @ ELM Mode S /6.4% / 50V: (PAVG = 64W) ■ 1.030GHz and 1.090GHz Operating Frequency ■ Internal Impedance Pre-matched...
GaN S-Band Radar Transistor -- IGN2732M10 ■ GaN on SiC HEMT Technology ■ POUT-PK = 10W @ 300us/10%/40V; (PAVG = 1.0W) ■ 2.70-3.20GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device...
GaN S-Band Radar Transistor -- IGN2731M120 ■ GaN on SiC HEMT Technology ■ POUT-PK = 120W @ 100us/20%/30V ■ 2.7-3.1GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate...
GaN S-Band Radar Transistor -- IGT2731L120 ■ GaN on SiC HEMT Technology ■ POUT-PK = 120W @ 40ms/50%/32V ■ 2.7-3.1GHz Instantaneous Operating Frequency Range ■ 50Ω Internally Impedance Matched Device ■ Depletion Mode Device ■ Negative...
GaN S-Band Radar Transistor -- IGN2731M130 ■ GaN on SiC HEMT Technology ■ POUT-PK = 130W @ 100us/10%/50V ■ 2.7-3.1GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate...
GaN C-Band Radar Transistor -- IGN3842M130 ■ GaN on SiC HEMT Technology ■ POUT-PK = 130W @ 100us/2%/50V ■ 3.8-4.2GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate...
GaN S-Band Radar Transistor -- IGT2731M130 ■ GaN on SiC HEMT Technology ■ POUT-PK = 130W @ 300us/10%/50V ■ 2.7-3.1GHz Instantaneous Operating Frequency Range ■ 50Ω Internally Impedance Matched Device ■ Depletion Mode Device ■ Negative...
GaN S-Band Radar Transistor -- IGN3135M135 ■ GaN on SiC HEMT Technology ■ POUT-PK = 135W @ 300us/10%/50V; (PAVG = 13.5W) ■ 3.1-3.5GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device...
GaN S-Band Radar Transistor -- IGN2731M180 ■ GaN on SiC HEMT Technology ■ POUT-PK = 180W @ 100us/10%/50V ■ 2.7-3.1GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate...
GaN S-Band Radar Transistor -- IGN2731M200 ■ GaN on SiC HEMT Technology ■ POUT-PK = 200W @ 300us/10%/44V ■ 2.7-3.1GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate...
GaN S-Band Radar Transistor -- IGN2731L200 ■ GaN on SiC HEMT Technology ■ POUT-PK = 200W @ 3ms/30%/46V ■ 2.7-3.1GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate...
GaN S-Band Radar Transistor -- IGN3135M250 ■ GaN on SiC HEMT Technology ■ POUT-PK = 250W @ 300us/10%/50V ■ 3.1-3.5GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate...
GaN L-Band Avionics Transistor -- IGN1011M400 ■ GaN on SiC HEMT Technology ■ POUT-PK = 400W @ 128us/2%/50V ■ 1.030GHz and 1.090GHz Operating Frequencies ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate...
GaN L-Band Radar Transistor -- IGN1214M500R2 ■ GaN on SiC HEMT Technology ■ POUT-PK = 500W @ 100us/10%/50V ■ 1.2-1.4GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate...
GaN L-Band Radar Transistor -- IGN1214M500 ■ GaN on SiC HEMT Technology ■ POUT-PK = 500W @ 300us/10%/50V ■ 1.2-1.4GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate...
GaN L-Band Avionics Transistor -- IGN0912L500 ■ GaN on SiC HEMT Technology ■ POUT-PK = 500W @ 444 X 7uS ON, 6us OFF/ 22.7% OR 6ms, 20% DC / 50V ■ 0.96-1.22GHz Instantaneous Operating Frequency Range...
GaN C-Band Radar Transistor -- IGT5259L50 ■ GaN on SiC HEMT Technology ■ POUT-PK = 50W @ 1ms/15%/50V ■ 5.2-5.9GHz Instantaneous Operating Frequency Range ■ 50Ω Internally Impedance Matched Device ■ Depletion Mode Device ■ Negative...
GaN S-Band Radar Transistor -- IGN2731M5 ■ GaN on SiC HEMT Technology ■ POUT-PK = 5W @ 300us/10%/50V ■ 2.70-3.10GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate...
GaN L-Band Avionics Transistor -- IGN1011M600 ■ GaN on SiC HEMT Technology ■ POUT-PK = 600W @ 128us/2%/50V ■ 1.030GHz and 1.090GHz Operating Frequencies ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate...
GaN S-Band Radar Transistor -- IGN2932M75 ■ GaN on SiC HEMT Technology ■ POUT-PK = 75W @ 100us/10%/45V; (PAVG = 7.5W) ■ 2.90-3.15GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device...
GaN L-Band Avionics Transistor -- IGN1011M800 ■ GaN on SiC HEMT Technology ■ POUT-PK = 800W @ 128us/2%/50V ■ 1.030GHz and 1.090GHz Operating Frequency ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate...
GaN L-Band Avionics Transistor -- IGN1030M800 ■ GaN on SiC HEMT Technology ■ POUT-PK = 800W @ 128us/2%/50V ■ 1.030GHz Operating Frequency ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate Voltage and...
GaN L-Band Avionics Transistor -- IGN1090M800 ■ GaN on SiC HEMT Technology ■ POUT-PK = 800W @ 128us/2%/50V ■ 1.090GHz Operating Frequency ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate Voltage and...
GaN L-Band Avionics Transistor -- IGN1030L800 ■ GaN on SiC HEMT Technology ■ POUT-PK = 800W @ ELM Mode S / 6.4% / 50V; (PAVG = 51.2W) ■ 1.030GHz Operating Frequency ■ Internal Impedance Pre-matched Device...
GaN L-Band Avionics Transistor -- IGN1011L1200 ■ GEN-2 GaN on SiC HEMT Technology ■ POUT-PK = 1200W @ ELM Mode S / 6.4% / 50V OR 2.4ms, 6.4% DC / 50V ■ 1.030GHz and 1.090GHz Operating...
GaN S-Band Radar Transistor -- IGN2729M500 Available in a bolt down flanged version as IGN2729M500 or in a solder mount earless version IGN2729M500S. IGN2729M500 is an internally pre-matched, gallium nitride (GaN) high electron mobility transistor (HEMT).
GaN Broadband Transistor -- IGN0110UM100 IGN0110UM100 is a dual gallium nitride (GaN) high electron mobility transistor (HEMT). This device is designed for Broadband applications operating over the 100 – 1GHz instantaneous frequency band. Under CW...
GaN S-Band Radar Transistor -- IGN2729M250C IGN2729M250C is an internally pre-matched, gallium nitride (GaN) high electron mobility transistor (HEMT). This part is designed for S-Band radar applications operating over the 2.7 – 2.9 GHz instantaneous frequency...
GaN S-Band Radar Transistor -- IGN2729M400 IGN2729M400 is an internally pre-matched, gallium nitride (GaN) high electron mobility transistor (HEMT). This part is designed for S-Band radar applications operating over the 2.7 – 2.9 GHz instantaneous frequency...