Integra Technologies, Inc. LDMOS L-Band Radar Transistor ILD1214L250

Description
The high power pulsed transistor part number ILD1214L250 is designed for L-Band systems operating at 1.2–1.4 GHz. Operating at a pulse width of 1ms with a duty factor of 10%, this dual MOSFET device supplies a minimum of 250 watts of peak pulse power across the instantaneous operating bandwidth of 1.215- 1.400 GHz. Fabricated with all gold metal contact, wire bonding and package for maximum reliability. All devices are 100% screened for large signal RF parameters in the broadband RF test fixture across the entire specified operating bandwidth with no variable or external tuning.
  • LDMOS L-Band Radar Transistor - ILD1214L250 - Integra Technologies, Inc.
    Integra Technologies, Inc.
Description
The high power pulsed transistor part number ILD1214L250 is designed for L-Band systems operating at 1.2–1.4 GHz. Operating at a pulse width of 1ms with a duty factor of 10%, this dual MOSFET device supplies a minimum of 250 watts of peak pulse power across the instantaneous operating bandwidth of 1.215- 1.400 GHz. Fabricated with all gold metal contact, wire bonding and package for maximum reliability. All devices are 100% screened for large signal RF parameters in the broadband RF test fixture across the entire specified operating bandwidth with no variable or external tuning.

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LDMOS L-Band Radar Transistor - ILD1214L250 - Integra Technologies, Inc.
Integra Technologies, Inc.
El Segundo, CA, USA
LDMOS L-Band Radar Transistor
ILD1214L250
LDMOS L-Band Radar Transistor ILD1214L250
The high power pulsed transistor part number ILD1214L250 is designed for L-Band systems operating at 1.2–1.4 GHz. Operating at a pulse width of 1ms with a duty factor of 10%, this dual MOSFET device supplies a minimum of 250 watts of peak pulse power across the instantaneous operating bandwidth of 1.215- 1.400 GHz. Fabricated with all gold metal contact, wire bonding and package for maximum reliability. All devices are 100% screened for large signal RF parameters in the broadband RF test fixture across the entire specified operating bandwidth with no variable or external tuning.

The high power pulsed transistor part number ILD1214L250 is designed for L-Band systems operating at 1.2–1.4 GHz. Operating at a pulse width of 1ms with a duty factor of 10%, this dual MOSFET device supplies a minimum of 250 watts of peak pulse power across the instantaneous operating bandwidth of 1.215- 1.400 GHz. Fabricated with all gold metal contact, wire bonding and package for maximum reliability. All devices are 100% screened for large signal RF parameters in the broadband RF test fixture across the entire specified operating bandwidth with no variable or external tuning.

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Technical Specifications

  Integra Technologies, Inc.
Product Category Bipolar RF Transistors
Product Number ILD1214L250
Product Name LDMOS L-Band Radar Transistor
Transistor Technology / Material GaN
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