The high power pulsed avionics transistor part number IB1011L110 is designed for L-Band avionics systems operating at 1030 and 1090 . While operating in class C mode under Mode S – ELM pulse burst conditions at VCC = 48V, this common base device supplies a minimum of 110 watts of peak pulse power. It utilizes a low loss internal input impedance matching structure to yield maximum device gain and to ease the implementation of external matching circuitry. The new generation bipolar transistor geometry utilizes a gold metallization system to achieve maximum reliability. Emitter ballast resistance is incorporated on the active cell for optimum thermal distribution and maximum reliability. All devices are 100% screened for large signal RF parameters.
| Integra Technologies, Inc. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | IB1011L110 |
| Product Name | BiPolar L-Band Avionics Transistor |
| Transistor Technology / Material | GaN |
