■ GaN on SiC HEMT Technology
■ POUT-PK = 120W @ 40ms/50%/32V
■ 2.7-3.1GHz Instantaneous Operating Frequency Range
■ 50Ω Internally Impedance Matched Device
■ Depletion Mode Device
■ Negative Gate Voltage and Bias Sequencing Required
■ Metal Based Package Sealed With Ceramic-Epoxy Lid
■ Gold Metallization System: Chip - Wire Bond - Package
■ Package Size: W=0.953″(24.21mm), L=0.685″(17.40mm)
■ 100% High Power RF Tested in 50Ω RF Test Fixture
| Integra Technologies, Inc. | |
|---|---|
| Product Category | RF MOSFET Transistors |
| Product Number | IGT2731L120 |
| Product Name | GaN S-Band Radar Transistor |
| Transistor Technology / Material | GaN |
