Integra Technologies, Inc. BiPolar L-Band Avionics Transistor IB0912L30

Description
The high power pulsed transistor device part number IB0912L30 is designed for systems operating over the instantaneous bandwidth of 960-1215 . While operating in class C mode under 450us-15% pulsing conditions and Vcc=36V, this common base device supplies a minimum of 30 watts of peak pulse power. It utilizes a low loss internal input impedance matching structure to yield maximum device gain and to ease the implementation of external matching circuitry. The new generation bipolar transistor geometry utilizes a gold metallization system to achieve maximum reliability. Emitter ballast resistance is incorporated on the active cell for optimum thermal distribution and maximum reliability. All devices are 100% screened for large signal RF parameters.
  • BiPolar L-Band Avionics Transistor - IB0912L30 - Integra Technologies, Inc.
    Integra Technologies, Inc.
Description
The high power pulsed transistor device part number IB0912L30 is designed for systems operating over the instantaneous bandwidth of 960-1215 . While operating in class C mode under 450us-15% pulsing conditions and Vcc=36V, this common base device supplies a minimum of 30 watts of peak pulse power. It utilizes a low loss internal input impedance matching structure to yield maximum device gain and to ease the implementation of external matching circuitry. The new generation bipolar transistor geometry utilizes a gold metallization system to achieve maximum reliability. Emitter ballast resistance is incorporated on the active cell for optimum thermal distribution and maximum reliability. All devices are 100% screened for large signal RF parameters.

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BiPolar L-Band Avionics Transistor - IB0912L30 - Integra Technologies, Inc.
Integra Technologies, Inc.
El Segundo, CA, USA
BiPolar L-Band Avionics Transistor
IB0912L30
BiPolar L-Band Avionics Transistor IB0912L30
The high power pulsed transistor device part number IB0912L30 is designed for systems operating over the instantaneous bandwidth of 960-1215 . While operating in class C mode under 450us-15% pulsing conditions and Vcc=36V, this common base device supplies a minimum of 30 watts of peak pulse power. It utilizes a low loss internal input impedance matching structure to yield maximum device gain and to ease the implementation of external matching circuitry. The new generation bipolar transistor geometry utilizes a gold metallization system to achieve maximum reliability. Emitter ballast resistance is incorporated on the active cell for optimum thermal distribution and maximum reliability. All devices are 100% screened for large signal RF parameters.

The high power pulsed transistor device part number IB0912L30 is designed for systems operating over the instantaneous bandwidth of 960-1215 . While operating in class C mode under 450us-15% pulsing conditions and Vcc=36V, this common base device supplies a minimum of 30 watts of peak pulse power. It utilizes a low loss internal input impedance matching structure to yield maximum device gain and to ease the implementation of external matching circuitry. The new generation bipolar transistor geometry utilizes a gold metallization system to achieve maximum reliability. Emitter ballast resistance is incorporated on the active cell for optimum thermal distribution and maximum reliability. All devices are 100% screened for large signal RF parameters.

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Technical Specifications

  Integra Technologies, Inc.
Product Category Bipolar RF Transistors
Product Number IB0912L30
Product Name BiPolar L-Band Avionics Transistor
Transistor Technology / Material GaN
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